Publications by authors named "Evgeniy Sergeevich Shamin"
Article Synopsis
- Memristors are promising for applications in neural processors and non-volatile memory, with modeling being a crucial design stage.
- Existing methods for extracting parameters in compact models can impact accuracy, prompting a review of these methods.
- New algorithms for parameter extraction of an adaptive compact model were proposed and validated using volt-ampere characteristics of a specific memristor structure (TiN/HfAlO/HfO/TiN).
A Study of the Applicability of Existing Compact Models to the Simulation of Memristive Structures Characteristics on Low-Dimensional Materials.
Fedor Pavlovich Meshchaninov Dmitry Alexeevich Zhevnenko Vladislav Sergeevich Kozhevnikov Evgeniy Sergeevich Shamin Oleg Alexandrovich Telminov
Micromachines (Basel)
September 2021
The use of low-dimensional materials is a promising approach to improve the key characteristics of memristors. The development process includes modeling, but the question of the most common compact model applicability to the modeling of device characteristics with the inclusion of low-dimensional materials remains open. In this paper, a comparative analysis of linear and nonlinear drift as well as threshold models was conducted.
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