Ferroelectric field-effect transistors based on HfO: a review.

In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs) based on ferroelectric hafnium oxide (HfO), ten years after the first report on such a device. With a focus on the use of FeFET for nonvolatile memory application, we discuss its basic operation principles, switching mechanisms, device types, material properties and array structures. Key device performance metrics such as cycling endurance, retention, memory window, multi-level operation and scaling capability are analyzed.

Frequency Mixing with HfO-Based Ferroelectric Transistors.

Second harmonic generation (SHG) and frequency mixing of electrical signals are fundamental for a wide range of radiofrequency applications. Recently, ferroelectric field-effect transistors (FeFETs), made from ferroelectric hafnium oxide (HfO), have demonstrated promising SHG capabilities because of their unique symmetric transfer curves. In this paper, we illustrate how this symmetry is highly sensitive to material properties by varying the thickness of the ferroelectric layer and the doping of the silicon substrate.