Electrical manipulation of telecom color centers in silicon.

Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by implementing novel lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble optical response is characterized under application of a reverse-biased DC electric field, observing both 100% modulation of fluorescence signal, and wavelength redshift of approximately 1.

Three-Dimensional Reconfigurable Optical Singularities in Bilayer Photonic Crystals.

Metasurfaces and photonic crystals have revolutionized classical and quantum manipulation of light and opened the door to studying various optical singularities related to phases and polarization states. However, traditional nanophotonic devices lack reconfigurability, hindering the dynamic switching and optimization of optical singularities. This paper delves into the underexplored concept of tunable bilayer photonic crystals (BPhCs), which offer rich interlayer coupling effects.

Laser writing of spin defects in nanophotonic cavities.

High-yield engineering and characterization of cavity-emitter coupling is an outstanding challenge in developing scalable quantum network nodes. Ex situ defect formation systems prevent real-time analysis, and previous in situ methods are limited to bulk substrates or require further processing to improve the emitter properties. Here we demonstrate the direct laser writing of cavity-integrated spin defects using a nanosecond pulsed above-bandgap laser.

Enhanced cavity coupling to silicon vacancies in 4H silicon carbide using laser irradiation and thermal annealing.

The negatively charged silicon monovacancy [Formula: see text] in 4H silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit in solid-state quantum information applications. Photonic crystal cavities (PCCs) can augment the optical emission of the [Formula: see text], yet fine-tuning the defect-cavity interaction remains challenging. We report on two postfabrication processes that result in enhancement of the [Formula: see text] optical emission from our PCCs, an indication of improved coupling between the cavity and ensemble of silicon vacancies.

Imaging of surface plasmon polaritons in low-loss highly metallic titanium nitride thin films in visible and infrared regimes.

Titanium nitride (TiN) has been identified as a promising refractory material for high temperature plasmonic applications such as surface plasmon polaritons (SPPs) waveguides, lasers and light sources, and near field optics. Such SPPs are sensitive not only to the highly metallic nature of the TiN, but also to its low loss. We have formed highly metallic, low-loss TiN thin films on MgO substrates to create SPPs with resonances between 775-825 nm.

Purcell Enhancement of a Single Silicon Carbide Color Center with Coherent Spin Control.

Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here, we present the Purcell enhancement of a single neutral divacancy coupled to a photonic crystal cavity.

A comparison of inverted and upright laser-activated titanium nitride micropyramids for intracellular delivery.

The delivery of biomolecules into cells relies on porating the plasma membrane to allow exterior molecules to enter the cell via diffusion. Various established delivery methods, including electroporation and viral techniques, come with drawbacks such as low viability or immunotoxicity, respectively. An optics-based delivery method that uses laser pulses to excite plasmonic titanium nitride (TiN) micropyramids presents an opportunity to overcome these shortcomings.

Ultra-low-threshold InGaN/GaN quantum dot micro-ring lasers.

In this work, we demonstrate ultra-low-threshold, optically pumped, room-temperature lasing in GaN microdisk and micro-ring cavities containing InGaN quantum dots and fragmented quantum wells, with the lowest measured threshold at a record low of 6.2  μJ/cm. When pump volume decreases, we observe a systematic decrease in the lasing threshold of micro-rings.

Robust lanthanide emitters in polyelectrolyte thin films for photonic applications.

Trivalent lanthanides provide stable emission sources at wavelengths spanning the ultraviolet through the near infrared with uses in telecommunications, lighting, and biological sensing and imaging. We describe a method for incorporating an organometallic lanthanide complex within polyelectrolyte multilayers, producing uniform, optically active thin films on a variety of substrates. These films demonstrate excellent emission with narrow linewidths, stable over a period of months, even when bound to metal substrates.

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center.

Point defects in silicon carbide are rapidly becoming a platform of great interest for single-photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCCs) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers.

1.55 μm band low-threshold, continuous-wave lasing from InAs/InAlGaAs quantum dot microdisks.

InAs/InAlGaAs quantum dot active layers within microcavity resonators offer the potential of ultra-low-threshold lasing in the 1.55 μm telecom window. Here, we demonstrate the first quantum dot microdisk laser with single-mode emission around 1.

1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon.

We report comparison of lasing dynamics in InAs quantum dot (QD) micro-disk lasers (MDLs) monolithically grown on V-groove patterned and planar Si (001) substrates. TEM characterizations reveal abrupt interfaces and reduced threading dislocations in the QD active regions when using the GaAs-on-V-grooved-Si template. The improved crystalline quality translates into lower threshold power in the optically pumped continuous-wave MDLs.

Nonlinear Refractory Plasmonics with Titanium Nitride Nanoantennas.

Titanium nitride (TiN) is a novel refractory plasmonic material which can sustain high temperatures and exhibits large optical nonlinearities, potentially opening the door for high-power nonlinear plasmonic applications. We fabricate TiN nanoantenna arrays with plasmonic resonances tunable in the range of about 950-1050 nm by changing the antenna length. We present second-harmonic (SH) spectroscopy of TiN nanoantenna arrays, which is analyzed using a nonlinear oscillator model with a wavelength-dependent second-order response from the material itself.

Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon.

Direct integration of high-performance laser diodes on silicon will dramatically transform the world of photonics, expediting the progress toward low-cost and compact photonic integrated circuits (PICs) on the mainstream silicon platform. Here, we report, to the best of our knowledge, the first 1.3 μm room-temperature continuous-wave InAs quantum-dot micro-disk lasers epitaxially grown on industrial-compatible Si (001) substrates without offcut.

Fabrication of High-Q Nanobeam Photonic Crystals in Epitaxially Grown 4H-SiC.

Silicon carbide (SiC) is an intriguing material due to the presence of spin-active point defects in several polytypes, including 4H-SiC. For many quantum information and sensing applications involving such point defects, it is important to couple their emission to high quality optical cavities. Here we present the fabrication of 1D nanobeam photonic crystal cavities (PCC) in 4H-SiC using a dopant-selective etch to undercut a homoepitaxially grown epilayer of p-type 4H-SiC.

Reduced plasma-induced damage to near-surface nitrogen-vacancy centers in diamond.

Understanding plasma etch damage on near-surface nitrogen vacancy (NV) centers in diamond is essential for preserving NV emission in photonic structures and magnetometry systems. We have developed a methodology to compare the optical properties of ensemble NV centers initially 70 nm from the surface brought closer to the surface through etching with O2 plasmas in three different reactors. We employ a conventional reactive ion etcher, a barrel etcher, and a downstream etcher.

Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities.

In spite of the theoretical advantages associated with nitride microcavities, the quality factors of devices with embedded indium gallium nitride (InGaN) or gallium nitride (GaN) optical emitters still remain low. In this work we identify threading dislocations (TDs) as a major limitation to the fabrication of high quality factor devices in the nitrides. We report on the use of cathodoluminescence (CL) to identify individual TD positions within microdisk lasers containing either InGaN quantum wells or quantum dots.

Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities.

Low-threshold lasers realized within compact, high-quality optical cavities enable a variety of nanophotonics applications. Gallium nitride materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light-matter interactions and realize practical devices such as efficient light-emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low-threshold lasers have not been clearly demonstrated.

Engineered micro- and nanoscale diamonds as mobile probes for high-resolution sensing in fluid.

The nitrogen-vacancy (NV) center in diamond is an attractive platform for quantum information and sensing applications because of its room temperature operation and optical addressability. A major research effort focuses on improving the quantum coherence of this defect in engineered micro- and nanoscale diamond particles (DPs), which could prove useful for high-resolution sensing in fluidic environments. In this work we fabricate cylindrical diamonds particles with finely tuned and highly reproducible sizes (diameter and height ranging from 100 to 700 and 500 nm to 2 μm, respectively) using high-purity, single-crystal diamond membranes with shallow-doped NV centers.

Two-dimensional hybrid photonic/plasmonic crystal cavities.

We present a 2-D plasmonic crystal design with visible band-gap by combining a 2-D photonic crystal with TM band-gap and a silver surface. Simulations show that the presence of the silver surface gives rise to an expanded band-gap. A plasmonic crystal defect cavity with Q ~300 and mode volume ~1.

Synthesis of luminescent europium defects in diamond.

Lanthanides are vital components in lighting, imaging technologies and future quantum memory applications owing to their narrow optical transitions and long spin coherence times. Recently, diamond has become a pre-eminent platform for the realisation of many experiments in quantum information science. Here we demonstrate a promising approach to incorporate Eu ions into diamond, providing a means to harness the exceptional characteristics of both lanthanides and diamond in a single material.

Controlled mode tuning in 1-D 'RIM' plasmonic crystal trench cavities probed with coupled optical emitters.

We present a design of plasmonic cavities that consists of two sets of 1-D plasmonic crystal reflectors on a plasmonic trench waveguide. A 'reverse image mold' (RIM) technique was developed to pattern high-resolution silver trenches and to embed emitters at the cavity field maximum, and FDTD simulations were performed to analyze the frequency response of the fabricated devices. Distinct cavity modes were observed from the photoluminescence spectra of the organic dye embedded within these cavities.

The structure-function relationships of a natural nanoscale photonic device in cuttlefish chromatophores.

Cuttlefish, Sepia officinalis, possess neurally controlled, pigmented chromatophore organs that allow rapid changes in skin patterning and coloration in response to visual cues. This process of adaptive coloration is enabled by the 500% change in chromatophore surface area during actuation. We report two adaptations that help to explain how colour intensity is maintained in a fully expanded chromatophore when the pigment granules are distributed maximally: (i) pigment layers as thin as three granules that maintain optical effectiveness and (ii) the presence of high-refractive-index proteins-reflectin and crystallin-in granules.

Quantum spintronics: engineering and manipulating atom-like spins in semiconductors.

The past decade has seen remarkable progress in isolating and controlling quantum coherence using charges and spins in semiconductors. Quantum control has been established at room temperature, and electron spin coherence times now exceed several seconds, a nine-order-of-magnitude increase in coherence compared with the first semiconductor qubits. These coherence times rival those traditionally found only in atomic systems, ushering in a new era of ultracoherent spintronics.