While metal modulated epitaxy (MME) has been shown useful for hyperdoping, where hole concentrations 40 times higher than other techniques have been demonstrated, and the ability to control phase separation in immiscible III-nitrides, the complexity of the dynamically changing surface conditions during the cyclic growth is poorly understood. While MME is capable of superb crystal quality, performing MME in an improper growth regime can result in defective material. These complications have made the transfer of MME knowledge challenging.
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