SrTiO and (Ba,Sr)TiO Films Epitaxially Grown on SrRuO Using Atomic Layer Deposition.

High dielectric constant () materials have been investigated to improve the performance of dynamic random access memory (DRAM) capacitors. However, the conventional binary oxides have reached their fundamental limit of < 100. In this study, we investigated alternative ternary oxides, SrTiO (STO) and (Ba,Sr)TiO (BSTO), which were epitaxially grown on SrRuO (SRO) using atomic layer deposition (ALD).