Highly Reliable Organic Field-Effect Transistors with Molecular Additives for a High-Performance Printed Gas Sensor.

Organic semiconductors (OSCs) are promising sensing materials for printed flexible gas sensors. However, OSCs are unstable in the humid air, which limits the realization of gas sensors for multiple usages. In this paper, we report a facile and effective way to improve the air stability of an OSC film to realize multiple reversibly used printed gas sensors by adding molecular additives.

Towards efficient and stable perovskite solar cells employing non-hygroscopic F4-TCNQ doped TFB as the hole-transporting material.

Designing an efficient and stable hole transport layer (HTL) material is one of the essential ways to improve the performance of organic-inorganic perovskite solar cells (PSCs). Herein, for the first time, an efficient model of a hole transport material (HTM) is demonstrated by optimized doping of a conjugated polymer TFB (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)]) with a non-hygroscopic p-type dopant F4-TCNQ (2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane) for high-efficiency PSCs. The PSC with the F4-TCNQ doped TFB exhibits the best power conversion efficiency (PCE) of 17.

Spontaneous Doping at the Polymer-Polymer Interface for High-Performance Organic Transistors.

Low- k amorphous fluorinated polymers such as poly(perfluoroalkenylvinyl ether) (CYTOP) have widely been used as gate dielectrics for organic field-effect transistors (OFETs) because of their strong hydrophobicity to prevent the penetration of moisture and other contaminants and their perfect solvent orthogonality with organic semiconductors. Here, we report a new functionality of the fluorinated low- k polymer dielectrics, which is spontaneous p doping at the dielectric-semiconductor interface in OFETs. This functionality makes the ambipolar charge transport a unipolar p type.

Design of New Isoindigo-Based Copolymer for Ambipolar Organic Field-Effect Transistors.

We report the synthesis of a new conjugated polymer composed of isoindigo (IID) and 2,3-bis[thiophenyl-2-yl]thiophene acrylonitrile (CNTVT) subunits for high-performance n-type organic field-effect transistors (OFETs). To realize high electron mobility for the IID-based conjugated polymer, an electron-withdrawing nitrile group is incorporated into the vinylene unit, thereby shifting the energy of the lowest unoccupied molecular orbital for efficient electron injection from Au electrodes without disrupting the backbone planarity. Uniaxially aligned IID-CNTVT-conjugated polymer films for efficient intramolecular charge transport are achieved by off-center spin-coating from preaggregated solutions.

Toward High Conductivity of Electrospun Indium Tin Oxide Nanofibers with Fiber Morphology Dependent Surface Coverage: Postannealing and Polymer Ratio Effects.

High electrical conductivity of metal oxide thin films needs uniform surface coverage, which has been the issue for the thin films based on electrospun nanofibers (NFs) that have advantage over the sputtered/spin-coated films with respect to large surface area and mechanical flexibility. Herein, we investigated a reduction in the sheet resistance of electrospun indium tin oxide (ITO) NF films with improved surface coverage. We found that the surface coverage depends significantly on the electrospinnable polymer concentration in the precursor solutions, especially after post-hot-plate annealing following the infrared radiation furnace treatment.