Pulse-Modulated Plasma Etching of Copper Thin Films via CH₃COOH/Ar.

Pulse-modulated plasma etching of copper masked using SIO₂ films was conducted via a CH₃COOH/Ar. The etch characteristics were examined under pulse-modulated plasma. As the duty ratio of pulse decreased and the frequency of pulse increased, the etch selectivity and etch profile were improved.

Etch Characteristics of Micrometer-Scale Masked Cu Thin Films Using Inductively Coupled Plasma of Hâ‚‚/Ar.

Inductively coupled plasma reactive ion etching (ICPRIE) of copper thin films masked with photoresist (PR) and SiOâ‚‚ thin films was performed in Hâ‚‚/Ar gas. As the Hâ‚‚ concentration increased, the etch rates of copper films significantly decreased. The etch profiles show heavy redeposition on the sidewall of the etched films in low Hâ‚‚ concentration but steep etch profiles without redeposition and etch by-product were obtained in high Hâ‚‚ concentration.