Vertical oxide thin-film transistor with interfacial oxidation.

A vertical oxide thin-film transistor was developed with interfacial oxidation for low voltage operation. The gate metal was used as a spacer for the definition of the transistor's channel as well as the gate electrode. After definition of the vertical side wall, an IGZO (In-Ga-Zn Oxide) layer was deposited, followed by the interfacial oxidation to form a thin gate insulator.

Effects of Annealing on an IGZO-Metal Interface.

The interface reaction between a metal layer and a layer of amorphous indium-gallium-zinc oxide was investigated. Oxygen atoms at the interface bond to the metal atoms and form metal oxide. The reaction depends on the annealing temperature and ambient conditions.

Interfacial Oxidized Gate Insulators for Low-Power Oxide Thin-Film Transistors.

Low power consumption is essential for wearable and internet-of-things applications. An effective way of reducing power consumption is to reduce the operation voltage using a very thin and high-dielectric gate insulator. In an oxide thin-film transistor (TFT), the channel layer is an oxide material in which oxygen reacts with metal to form a thin insulator layer.