In this paper, we report an approach to design nanolayered memristive compositions based on TiO/AlO bilayer structures with analog non-volatile and volatile tuning of the resistance. The structure of the TiO layer drives the physical mechanism underlying the non-volatile resistance switching, which can be changed from electronic to ionic, enabling the synaptic behavior emulation. The presence of the anatase phase in the amorphous TiO layer induces the resistive switching mechanism due to electronic processes.
View Article and Find Full Text PDFMicromachines (Basel)
January 2022
The article presents the results of the development and study of a combined circuitry (compact) model of thin metal oxide films based memristive elements, which makes it possible to simulate both bipolar switching processes and multilevel tuning of the memristor conductivity taking into account the statistical variability of parameters for both device-to-device and cycle-to-cycle switching. The equivalent circuit of the memristive element and the equation system of the proposed model are considered. The software implementation of the model in the MATLAB has been made.
View Article and Find Full Text PDFThe article is devoted to the development and creation of a multiphysics simulator that can, on the one hand, simulate the most significant physical processes in the IPMC actuator, and on the other hand, unlike commercial products such as COMSOL, can use computing resources economically. The developed mathematical model is an adjoint differential equation describing the transport of charged particles and water molecules in the ion-exchange membrane, the electrostatic field inside, and the mechanical deformation of the actuator. The distribution of the electrostatic potential in the interelectrode space is located by means of the solution of the Poisson equation with the Dirichlet boundary conditions, where the charge density is a function of the concentration of cations inside the membrane.
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