We report on the influence of the liquid droplet composition on the Sn incorporation in GeSn nanowires (NWs) grown by the vapor-liquid-solid (VLS) mechanism with different catalysts. The variation of the NW growth rate and morphology with the growth temperature is investigated and 400 °C is identified as the best temperature to grow the longest untapered NWs with a growth rate of 520 nm min. When GeSn NWs are grown with pure Au droplets, we observe a core-shell like structure with a low Sn concentration of less than 2% in the NW core regardless of the growth temperature.
View Article and Find Full Text PDFIn this work, we present an innovative strategy for the grafting of an antibacterial agent onto nanocellulose materials in supercritical carbon dioxide (scCO). Dense cellulose nanofibril (CNF) nanopapers were prepared and subsequently functionalized in supercritical carbon dioxide with an aminosilane, -(6-aminohexyl)aminopropyltrimethoxysilane (AHA-P-TMS). Surface characterization (X-ray photoelectron spectroscopy, contact angle, ζ-potential analysis) evidenced the presence of the aminosilane.
View Article and Find Full Text PDFIn recent years, plasma enhanced atomic layer deposition (PEALD) has emerged as a key method for the growth of conformal and homogeneous aluminum nitride (AlN) films at the nanoscale. In this work, the utilized PEALD reactor was equipped not only with a traditional remote Inductively Coupled Plasma source but also with an innovative additional power supply connected to the substrate holder. Thus, we investigate here the substrate biasing effect on AlN film quality deposited on (100) silicon.
View Article and Find Full Text PDFUnderstanding the structural and electronic factors governing the efficiency of dye-sensitized NiO photocathodes is essential to optimize solar fuel production in photoelectrochemical cells (PECs). For these purpose, three different ruthenium dyes, bearing either two or four methylphosphonate anchoring groups and either a bipyridine or a dipyridophenazine ancillary ligand, were synthesized and grafted onto NiO films. These photoelectrodes were fully characterized by XPS, ToF-SIMS, UV-vis absorption, time-resolved emission and femtosecond transient absorption spectroscopies.
View Article and Find Full Text PDFFunctionalization of Ge surfaces with the aim of incorporating specific dopant atoms to form high-quality junctions is of particular importance for the development of solid-state devices. In this study, we report the shallow doping of Ge wafers with a monolayer doping strategy that is based on the controlled grafting of Sb precursors and the subsequent diffusion of Sb into the wafer upon annealing. We also highlight the key role of citric acid in passivating the surface before its reaction with the Sb precursors and the benefit of a protective SiO overlayer that enables an efficient incorporation of Sb dopants with a concentration higher than 10 cm.
View Article and Find Full Text PDFHfO-based resistive oxide memories are studied by core-level spectromicroscopy using a laboratory-based X-ray photoelectron emission microscope (XPEEM). After forming, the top electrode is thinned to about 1 nm for the XPEEM analysis, making the buried electrode/HfO interface accessible whilst preserving it from contamination. The results are obtained in the true photoemission channel mode from individual memory cells (5 × 5 µm) excited by low-flux laboratory X-rays, in contrast to most studies employing the X-ray absorption channel using potentially harmful bright synchrotron X-rays.
View Article and Find Full Text PDFThe missing link: Ferrocene and porphyrin monolayers are tethered on silicon surfaces with short (see picture, left) or long (right) linkers. Electron transfer to the silicon substrate is faster for monolayers with a short linker.Ferrocene and porphyrin derivatives are anchored on Si(100) surfaces through either a short two-carbon or a long 11-carbon linker.
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