GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies.

Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices to radio-frequency electronics and most forms of optoelectronics. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use.

Semiconductor wires and ribbons for high-performance flexible electronics.

This article reviews the properties, fabrication and assembly of inorganic semiconductor materials that can be used as active building blocks to form high-performance transistors and circuits for flexible and bendable large-area electronics. Obtaining high performance on low temperature polymeric substrates represents a technical challenge for macroelectronics. Therefore, the fabrication of high quality inorganic materials in the form of wires, ribbons, membranes, sheets, and bars formed by bottom-up and top-down approaches, and the assembly strategies used to deposit these thin films onto plastic substrates will be emphasized.

Stamp collapse in soft lithography.

We have studied the so-called roof collapse in soft lithography. Roof collapse is due to the adhesion between the PDMS stamp and substrate, and it may affect the quality of soft lithography. Our analysis accounts for the interactions of multiple punches and the effect of elastic mismatch between the PDMS stamp and substrate.

Improved surface chemistries, thin film deposition techniques, and stamp designs for nanotransfer printing.

Nanotransfer printing represents an additive approach for patterning thin layers of solid materials with nanometer resolution. The surface chemistries, thin film deposition techniques, and stamp designs are all important for the proper operation of this method. This paper presents some details concerning processing procedures and other considerations needed for patterning two- and three-dimensional nanostructures with low density of defects and minimal distortions.

Elastomeric transistor stamps: reversible probing of charge transport in organic crystals.

We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as approximately 15 cm2/V.