Rare-earth doped micro-emitters made by lift-off processing in pulsed laser deposited layers on Si substrate.

Rare earth emitters are promising in integrated optics but require complex integration on silicon. In this work, we have fabricated an YO:Eu micro-emitter on SiO on Si substrate without etching. Since pulsed laser deposition produces a high quality layer at room temperature, material can be locally deposited on top of substrates by lift-off processing.