Modulation of the Bi 6s Lone Pair State in Perovskites for High-Mobility p-Type Oxide Semiconductors.

Oxide semiconductors are key materials in many technologies from flat-panel displays，solar cells to transparent electronics. However, many potential applications are hindered by the lack of high mobility p-type oxide semiconductors due to the localized O-2p derived valence band (VB) structure. In this work, the VB structure modulation is reported for perovskite Ba BiMO (M = Bi, Nb, Ta) via the Bi 6s lone pair state to achieve p-type oxide semiconductors with high hole mobility up to 21 cm V s , and optical bandgaps widely varying from 1.