Laterally oriented single-crystal silicon nanowires are epitaxially grown between highly doped vertically oriented silicon electrodes in the form of nanobridges. Resistance values extracted from the current-voltage measurements for a large number of nanobridges with varying lengths and diameters are used to propose a model which highlights the relative contribution of the contact resistance to the total resistance for nanowire-based devices. It is shown that the contact resistance depends on the effective conducting cross-section area and hence is influenced by the presence of a surface depletion layer.
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