Publications by authors named "Erik van Loon"

Using scanning tunneling microscopy and spectroscopy, for a monolayer of transition metal dichalcogenide H-NbS grown by molecular beam epitaxy on graphene, we provide unambiguous evidence for a charge density wave (CDW) with a 3 × 3 superstructure, which is not present in bulk NbS. Local spectroscopy displays a pronounced gap on the order of 20 meV at the Fermi level. Within the gap, low-energy features are present.

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Article Synopsis
  • Two-dimensional materials are significantly affected by their surrounding dielectric environment, which can weaken the Coulomb interaction between electrons.
  • This reduction in Coulomb interaction is crucial for manipulating the insulating states in Mott materials, enabling control over what is termed "Mottness."
  • Our calculations indicate that by applying Coulomb engineering, we can achieve notable changes in electronic properties, including an insulator-to-metal transition, and we outline conditions necessary for experimental validation of this approach.
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In the standard model of charge density wave (CDW) transitions, the displacement along a single phonon mode lowers the total electronic energy by creating a gap at the Fermi level, making the CDW a metal-insulator transition. Here, using scanning tunneling microscopy and spectroscopy and ab initio calculations, we show that VS realizes a CDW which stands out of this standard model. There is a full CDW gap residing in the unoccupied states of monolayer VS.

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In dynamical mean-field theory, the correlations between electrons are assumed to be purely local. The dual fermion approach provides a systematic way of adding non-local corrections to the dynamical mean-field theory starting point. Initial applications of this method were largely restricted to the single-orbital Hubbard model.

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Strong repulsive interactions between electrons can lead to a Mott metal-insulator transition. The dynamical mean-field theory (DMFT) explains the critical end point and the hysteresis region usually in terms of single-particle concepts, such as the spectral function and the quasiparticle weight. In this Letter, we reconsider the critical end point of the metal-insulator transition on the DMFT's two-particle level.

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A current challenge in condensed matter physics is the realization of strongly correlated, viscous electron fluids. These fluids can be described by holography, that is, by mapping them onto a weakly curved gravitational theory via gauge/gravity duality. The canonical system considered for realizations has been graphene.

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For quasi-freestanding 2H-TaS in monolayer thickness grown by molecular beam epitaxy on graphene on Ir(111), we find unambiguous evidence for a charge density wave close to a 3 × 3 periodicity. Using scanning tunneling spectroscopy, we determine the magnitude of the partial charge density wave gap. Angle-resolved photoemission spectroscopy, complemented by scanning tunneling spectroscopy for the unoccupied states, makes a tight-binding fit for the band structure of the TaS monolayer possible.

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The theory of correlated electrons is currently moving beyond the paradigmatic Hubbard U, towards the investigation of intersite Coulomb interactions. Recent investigations have revealed that these interactions are relevant for the quantitative description of realistic materials. Physically, intersite interactions are responsible for two rather different effects: screening and bandwidth renormalization.

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