Evolution of Cu-In Catalyst Nanoparticles under Hydrogen Plasma Treatment and Silicon Nanowire Growth Conditions.

We report silicon nanowire (SiNW) growth with a novel Cu-In bimetallic catalyst using a plasma-enhanced chemical vapor deposition (PECVD) method. We study the structure of the catalyst nanoparticles (NPs) throughout a two-step process that includes a hydrogen plasma pre-treatment at 200 °C and the SiNW growth itself in a hydrogen-silane plasma at 420 °C. We show that the H-plasma induces a coalescence of the Cu-rich cores of as-deposited thermally evaporated NPs that does not occur when the same annealing is applied without plasma.

Large Area Radial Junction Silicon Nanowire Solar Mini-Modules.

In this work, we introduce the demonstration of 5 × 5 cm mini-modules based on radial junction silicon nanowire (RJ SiNW) devices grown by plasma-assisted vapor-liquid-solid (VLS) technique. The mini-modules are obtained thanks to an industrial laser scribing technique. The electrical parameters have been highlighted to address the performance of these devices and perspectives towards competitive RJ SiNW solar modules.

Plasma nanotexturing of silicon surfaces for photovoltaics applications: influence of initial surface finish on the evolution of topographical and optical properties.

Using a plasma to generate a surface texture with feature sizes on the order of tens to hundreds of nanometers ("nanotexturing") is a promising technique being considered to improve efficiency in thin, high-efficiency crystalline silicon solar cells. This study investigates the evolution of the optical properties of silicon samples with various initial surface finishes (from mirror polish to various states of micron-scale roughness) during a plasma nanotexturing process. It is shown that during said process, the appearance and growth of nanocone-like structures are essentially independent of the initial surface finish, as quantified by the auto-correlation function of the surface morphology.

Unravelling a simple method for the low temperature synthesis of silicon nanocrystals and monolithic nanocrystalline thin films.

In this work, we present new results on the plasma processing and structure of hydrogenated polymorphous silicon (pm-Si:H) thin films. pm-Si:H thin films consist of a low volume fraction of silicon nanocrystals embedded in a silicon matrix with medium range order, and they possess this morphology as a significant contribution to their growth comes from the impact on the substrate of silicon clusters and nanocrystals synthesized in the plasma. Quadrupole mass spectrometry, ion flux measurements, and material characterization by transmission electron microscopy (TEM) and atomic force microscopy all provide insight on the contribution to the growth by silicon nanocrystals during PECVD deposition.

Plasma-Assisted Growth of Silicon Nanowires by Sn Catalyst: Step-by-Step Observation.

A comprehensive study of the silicon nanowire growth process has been carried out. Silicon nanowires were grown by plasma-assisted-vapor-solid method using tin as a catalyst. We have focused on the evolution of the silicon nanowire density, morphology, and crystallinity.

Strong ionization asymmetry in a geometrically symmetric radio frequency capacitively coupled plasma induced by sawtooth voltage waveforms.

The ionization dynamics in geometrically symmetric parallel plate capacitively coupled plasmas driven by radio frequency tailored voltage waveforms is investigated using phase resolved optical emission spectroscopy (PROES) and particle-in-cell (PIC) simulations. Temporally asymmetric waveforms induce spatial asymmetries and offer control of the spatiotemporal dynamics of electron heating and associated ionization structures. Sawtooth waveforms with different rise and fall rates are employed using truncated Fourier series approximations of an ideal sawtooth.

Understanding the amorphous-to-microcrystalline silicon transition in SiF4/H2/Ar gas mixtures.

We report on the growth of microcrystalline silicon films from the dissociation of SiF4/H2/Ar gas mixtures. For this growth chemistry, the formation of HF molecules provides a clear signature of the amorphous to microcrystalline growth transition. Depositing films from silicon tetrafluoride requires the removal of F produced by SiF4 dissociation, and this removal is promoted by the addition of H2 which strongly reacts with F to form HF molecules.