Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten.

3D integration of III-V semiconductors with Si CMOS is highly attractive since it allows combining new functions such as photonic and analog devices with digital signal processing circuitry. Thus far, most 3D integration approaches have used epitaxial growth on Si, layer transfer by wafer bonding, or die-to-die packaging. Here we present low-temperature integration of InAs on W using SiN template assisted selective area metal-organic vapor-phase epitaxy (MOVPE).

Low-Temperature Characteristics of Nanowire Network Demultiplexer for Qubit Biasing.

In current quantum computers, most qubit control electronics are connected to the qubit chip inside the cryostat by cables at room temperature. This poses a challenge when scaling the quantum chip to an increasing number of qubits. We present a lateral nanowire network 1-to-4 demultiplexer design fabricated by selective area grown InGaAs on InP, suitable for on chip routing of DC current for qubit biasing.

Oxygen relocation during HfO ALD on InAs.

Atomic layer deposition (ALD) is one of the backbones for today's electronic device fabrication. A critical property of ALD is the layer-by-layer growth, which gives rise to the atomic-scale accuracy. However, the growth rate - or growth per cycle - can differ significantly depending on the type of system, molecules used, and several other experimental parameters.

Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance.

Thin vertical nanowires based on III-V compound semiconductors are viable candidates as channel material in metal oxide semiconductor field effect transistors (MOSFETs) due to attractive carrier transport properties. However, for improved performance in terms of current density as well as contact resistance, adequate characterization techniques for resolving doping distribution within thin vertical nanowires are required. We present a novel method of axially probing the doping profile by systematically changing the gate position, at a constant gate length of 50 nm and a channel diameter of 12 nm, along a vertical nanowire MOSFET and utilizing the variations in threshold voltage shift (∼100 mV).

Relationships among Actual Motor Competence, Perceived Motor Competence, and Health-Related Fitness in College-Aged Males.

Actual motor competence (MC), perceived motor competence (PMC), and health-related fitness (HRF) exhibit a dynamic and reciprocal relationship in child populations, but little is known about the nature of these relationships in young adulthood. The purpose of the study was to assess these relationships in a sample of college-aged males. A total of 55 participants enrolled in an undergraduate Kinesiology course completed the study.

Is What You See What You Get? Perceptions of Personal Trainers' Competence, Knowledge, and Preferred Sex of Personal Trainer Relative to Physique.

Boerner, PR, Polasek, KM, True, L, Lind, E, and Hendrick, JL. Is what you see what you get? Perceptions of personal trainers' competence, knowledge, and preferred sex of personal trainer relative to physique. J Strength Cond Res 35(7): 1949-1955, 2021-The role that a personal trainer's (PT) physique plays in how potential clients perceive the PT is an understudied, yet potentially powerful, area of inquiry that has important professional implications.

Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire tunneling field-effect transistors.

In this paper, we analyze experimental data from state-of-the-art vertical InAs/InGaAsSb/GaSb nanowire tunneling field-effect transistors (TFETs) to study the influence of source doping on their performance. Overall, the doping level impacts both the off-state and on-state performance of these devices. Separation of the doping from the heterostructure improved the subthreshold swing of the devices.

Four Weeks of Off-Season Training Improves Peak Oxygen Consumption in Female Field Hockey Players.

The purpose of the study was to examine the changes in peak oxygen consumption ( V ˙O) and running economy (RE) following four-weeks of high intensity training and concurrent strength and conditioning during the off-season in collegiate female field hockey players. Fourteen female student-athletes (age 19.29 ± 0.

Comparison of antimicrobial resistance in E. coli isolated from rectal and floor samples in pens with diarrhoeic nursery pigs in Denmark.

Introduction: The prudent use of antibiotics in veterinary medicine necessitates the selection of antibiotic compounds with narrow-spectrums targeted against the specific pathogens involved. The same pathotype of enterotoxigenic E. coli (ETEC) was recently found both in diarrhoeic pigs and in samples from the pen floor where the pigs were housed.

Run Economy on a Normal and Lower Body Positive Pressure Treadmill.

Lower body positive pressure (LBPP) treadmill running is used more frequently in clinical and athletic settings. Accurate caloric expenditure is required for proper exercise prescription, especially for obese patients performing LBPP exercise. It is unclear if running on LBPP changes running economy (RE) in proportion to the changes in body weight.

Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si.

III-V compound semiconductors offer a path to continue Moore's law due to their excellent electron transport properties. One major challenge, integrating III-V's on Si, can be addressed by using vapor-liquid-solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption.

Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade.

Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is still plagued by defect response, and there is a large discrepancy between measured and simulated device performance. In this work, highly scaled InAs/InGaAsSb/GaSb vertical nanowire TunnelFET with ability to operate well below 60 mV/decade at technically relevant currents are fabricated and characterized. The structure, composition, and strain is characterized using transmission electron microscopy with emphasis on the heterojunction.

Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions.

In this paper, we correlate the growth of InAs nanowires with the detailed interface trap density (Dit) profile of the vertical wrap-gated InAs/high-k nanowire semiconductor-dielectric gate stack. We also perform the first detailed characterization and optimization of the influence of the in situ doping supplied during the nanowire epitaxial growth on the sequential transistor gate stack quality. Results show that the intrinsic nanowire channels have a significant reduction in Dit as compared to planar references.

InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.

Integration of III-V semiconductors on Si substrates allows for the realization of high-performance, low power III-V electronics on the Si-platform. In this work, we demonstrate the implementation of single balanced down-conversion mixer circuits, fabricated using vertically aligned InAs nanowire devices on Si. A thin, highly doped InAs buffer layer has been introduced to reduce the access resistance and serve as a bottom electrode.

Combining axial and radial nanowire heterostructures: radial Esaki diodes and tunnel field-effect transistors.

The ever-growing demand on high-performance electronics has generated transistors with very impressive figures of merit (Radosavljevic et al., IEEE Int. Devices Meeting 2009, 1-4 and Cho et al.

Uniform and position-controlled InAs nanowires on 2" Si substrates for transistor applications.

This study presents a novel approach for indirect integration of InAs nanowires on 2'' Si substrates. We have investigated and developed epitaxial growth of InAs nanowires on 2'' Si substrates via the introduction of a thin yet high-quality InAs epitaxial layer grown by metalorganic vapor phase epitaxy. We demonstrate well-aligned nanowire growth including precise position and diameter control across the full wafer using very thin epitaxial layers (<300 nm).

Effect of preexercise electrolyte ingestion on fluid balance in men and women.

Purpose: This article aimed to study the effect of preexercise ingestion of an electrolyte-containing beverage and meal on fluid balance during exercise in men and women.

Methods: Twenty healthy, college-aged people (10 males, 10 females; mean +/- SD = 51.2 +/- 9.

Do 'mind over muscle' strategies work? Examining the effects of attentional association and dissociation on exertional, affective and physiological responses to exercise.

Despite the well established physical and psychological benefits derived from leading a physically active life, rates of sedentary behaviour remain high. Dropout and non-compliance are major contributors to the problem of physical inactivity. Perceptions of exertion, affective responses (e.

Affective responses to increasing levels of exercise intensity in normal-weight, overweight, and obese middle-aged women.

At least 60 min of daily physical activity (PA) are recommended for weight control, a target achieved by only 3% of obese (OB) women. The purposes of this study were to examine (i) the affective responses of normal-weight (NW), overweight (OW), and OB middle-aged sedentary women to exercise of increasing intensity and (ii) the relationship of affective responses to self-efficacy and social physique anxiety. The women participated in a graded treadmill protocol to volitional exhaustion while providing ratings of pleasure-displeasure and perceived activation each minute.

Do regression-based computer algorithms for determining the ventilatory threshold agree?

The determination of the ventilatory threshold has been a persistent problem in research and clinical practice. Several computerized methods have been developed to overcome the subjectivity of visual methods but it remains unclear whether different computerized methods yield similar results. The purpose of this study was to compare nine regression-based computerized methods for the determination of the ventilatory threshold.

The affective impact of exercise intensity that slightly exceeds the preferred level: 'pain' for no additional 'gain'.

We examined the affective consequences of an exercise intensity that slightly exceeded the preferred level. Twenty-five middle-age sedentary women participated in two 20-min treadmill exercise bouts, one during which they could select the speed and one during which the speed was 10 per cent higher than the self-selected. During the bout at self-selected intensity, ratings of pleasure remained stable, whereas during the imposed-intensity bout pleasure decreased.

Can self-reported tolerance of exercise intensity play a role in exercise testing?

Introduction/purpose: To examine the relationship between self-reported tolerance of exercise intensity, measured by the Preference for and Tolerance of Exercise Intensity Questionnaire, and the amount of time individuals persevered during incremental treadmill tests to volitional fatigue beyond the point at which they had reached their ventilatory threshold.

Methods: The participants in study 1 were college age and physically active (14 women, 16 men). The participants in study 2 were 24 middle-aged women who were healthy but sedentary.

Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor.

An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the same device geometry, by introduction of the heterostructure, the threshold voltage is shifted 4 V, the maximum current on-off ratio is enhanced by a factor of 10,000, and the subthreshold swing is lowered by a factor 4 compared to the homogeneous transistor. At the same time, the drive current remains constant for a fixed gate overdrive.

Can self-reported preference for exercise intensity predict physiologically defined self-selected exercise intensity?

Exercise prescription guidelines emphasize the importance of individual preferences for different intensities, but such preferences have not been studied systematically. This study examined the hypothesis that the preference scale of the Preference for and Tolerance of the Intensity of Exercise Questionnaire would predict self-selected exercise intensity. Twenty-three previously sedentary middle-aged women participated in a treadmill test and a 20-min session at a self-selected intensity.