Obtaining of Mg-Zn Co-Doped GaN Powders via Nitridation of the Ga-Mg-Zn Metallic Solution and Their Structural and Optical Properties.

Mg-Zn co-dopedGaN powders via the nitridation of a Ga-Mg-Zn metallic solution at 1000 °C for 2 h in ammonia flow were obtained. XRD patterns for the Mg-Zn co-dopedGaN powders showed a crystal size average of 46.88 nm.

Isotherm Theoretical Study of the AlGaAsSb Quaternary Alloy Using the Regular Solution Approximation for Its Possible Growth via Liquid-Phase Epitaxy at Low Temperatures.

This work presents the theoretical calculation of isotherm diagrams for quaternary alloys of III-V semiconductor compounds with the form IIIIIIVV. In particular, the isotherm diagrams for the AlGaAsSb quaternary alloy at low temperatures were calculated (500 °C, 450 °C, 400 °C, and 350 °C). The AlGaAsSb quaternary alloy was formed from four binary compounds such as GaAs, AlAs, AlSb, and GaSb, all with direct bandgaps.

Porous Silicon Gas Sensors: The Role of the Layer Thickness and the Silicon Conductivity.

We studied the influences of the thickness of the porous silicon layer and the conductivity type on the porous silicon sensors response when exposed to ethanol vapor. The response was determined at room temperature (27 ∘C) in darkness using a horizontal aluminum electrode pattern. The results indicated that the intensity of the response can be directly or inversely proportional to the thickness of the porous layer depending on the conductivity type of the semiconductor material.