Ionic screening effect on low-frequency drain current fluctuations in liquid-gated nanowire FETs.

The ionic screening effect plays an important role in determining the fundamental surface properties within liquid-semiconductor interfaces. In this study, we investigated the characteristics of low-frequency drain current noise in liquid-gated nanowire (NW) field effect transistors (FETs) to obtain physical insight into the effect of ionic screening on low-frequency current fluctuation. When the NW FET was operated close to the gate voltage corresponding to the maximum transconductance, the magnitude of the low-frequency noise for the NW exposed to a low-ionic-strength buffer (0.