A GeSe switch-only-memory technology through polarized atomic distribution.

Ovonic threshold switching (OTS) materials that are frequently used with a resistor (1S1R) in memory devices have been found to show controllable and reversible memory properties, which could enable new memory architectures. Here, we examine the impact of composition on the polarity-dependent memory properties of GeSe OTS materials and reveal that an increase in Se content results in a higher set voltage threshold (V), a lower reset current (I), and a higher set energy. Specifically, GeSe demonstrates two distinct V of 5.