Achieving lambda/20 resolution by one-color initiation and deactivation of polymerization.

In conventional photolithography, diffraction limits the resolution to about one-quarter of the wavelength of the light used. We introduce an approach to photolithography in which multiphoton absorption of pulsed 800-nanometer (nm) light is used to initiate cross-linking in a polymer photoresist and one-photon absorption of continuous-wave 800-nm light is used simultaneously to deactivate the photopolymerization. By employing spatial phase-shaping of the deactivation beam, we demonstrate the fabrication of features with scalable resolution along the beam axis, down to a 40-nm minimum feature size.

Use of a simple cavity geometry for low and high repetition rate modelocked Ti:sapphire lasers.

We demonstrate a general procedure for varying the repetition rate of a modelocked Ti:sapphire laser using an asymmetric focusing geometry. Using this procedure, we have made an extended length cavity with a repetition rate of 45 MHz, and a reduced length cavity with a repetition rate of 275 MHz, each of which generates sub-20 fs pulses. This procedure allows the repetition rate of the laser to be more precisely tailored for a variety of applications without compromise in performance.