Synthesis of Highly Porous Graphene Oxide-PEI Foams for Enhanced Sound Absorption in High-Frequency Regime.

High-frequency noise exceeding 1 kHz has emerged as a pressing public health issue in industrial and occupational settings. In response to this challenge, the present study explores the development of a graphene oxide-polyethyleneimine (GO-PEI) foam (GPF) featuring a hierarchically porous structure. The synthesis and optimization of GPF were carried out using a range of analytical techniques, including Raman spectroscopy, scanning electron microscopy (SEM), Braunauer-Emmett-Teller (BET) analysis, X-ray diffraction (XRD), and Fourier-transform infrared spectroscopy (FT-IR).

Transparent Micromesh Patterned OLED Fabricated Using the In-Situ Deposition Process of an Ultrathin Mg:Ag Interconnection Layer.

TOLEDs (transparent organic light-emitting diodes) have emerged as one of the most promising ways to implement next-generation display form factors. Transparent OLEDs can provide new added value to HMDs (head mounted displays), automobiles, smart windows, mobile devices, TVs, etc. through their transparency, which allows objects to be seen from the other side.

Highly Transparent Red Organic Light-Emitting Diodes with AZO/Ag/AZO Multilayer Electrode.

Free-form factor optoelectronics is becoming more important for various applications. Specifically, flexible and transparent optoelectronics offers the potential to be adopted in wearable devices in displays, solar cells, or biomedical applications. However, current transparent electrodes are limited in conductivity and flexibility.

Analyses of All Small Molecule-Based Pentacene/C Organic Photodiodes Using Vacuum Evaporation Method.

The vacuum process using small molecule-based organic materials to make organic photodiodes (OPDIs) will provide many promising features, such as well-defined molecular structure, large scalability, process repeatability, and good compatibility for CMOS integration, compared to the widely used Solution process. We present the performance of planar heterojunction OPDIs based on pentacene as the electron donor and C60 as the electron acceptor. In these devices, MoO and BCP interfacial layers were interlaced between the electrodes and the active layer as the electron- and hole-blocking layer, respectively.

Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors.

Oxygen vacancies are a major factor that controls the electrical characteristics of the amorphous indium-gallium-zinc oxide transistor (a-IGZO TFT). Oxygen vacancies are affected by the composition ratio of the a-IGZO target and the injected oxygen flow rate. In this study, we fabricated three types of a-IGZO TFTs with different oxygen flow rates and then investigated changes in electrical characteristics.

Rapid photonic curing effects of xenon flash lamp on ITO-Ag-ITO multilayer electrodes for high throughput transparent electronics.

High-throughput transparent and flexible electronics are essential technologies for next-generation displays, semiconductors, and wearable bio-medical applications. However, to manufacture a high-quality transparent and flexible electrode, conventional annealing processes generally require 5 min or more at a high temperature condition of 300 °C or higher. This high thermal budget condition is not only difficult to apply to general polymer-based flexible substrates, but also results in low-throughput.

Effects of Insertion of Ag Mid-Layers on Laser Direct Ablation of Transparent Conductive ITO/Ag/ITO Multilayers: Role of Effective Absorption and Focusing of Photothermal Energy.

From the viewpoint of the device performance, the fabrication and patterning of oxide-metal-oxide (OMO) multilayers (MLs) as transparent conductive oxide electrodes with a high figure of merit have been extensively investigated for diverse optoelectronic and energy device applications, although the issues of their general concerns about possible shortcomings, such as a more complicated fabrication process with increasing cost, still remain. However, the underlying mechanism by which a thin metal mid-layer affects the overall performance of prepatterned OMO ML electrodes has not been fully elucidated. In this study, indium tin oxide (ITO)/silver (Ag)/ITO MLs are fabricated using an in-line sputtering method for different Ag thicknesses on glass substrates.

A Study on Formation of Aluminum-Doped Zinc Oxide Films by Pulsed-Direct Current Sputtering for CIGS Solar Cells.

Considering the relationship between thin film thickness of transparent conductive oxide (TCO) materials and the reversed pulse time in pulsed-direct current (DC) sputtering, aluminum-doped zinc oxide (AZO) films were deposited on glass substrates at different reversed pulse times by changing oxygen/argon (O₂/Ar) gas ratios for window layers of large area CuInGaSe₂ (CIGS) solar cells. As a result of the reduced sputtering time, the thickness of AZO film was decreased when the reversed pulsed time was increased. The higher resistance and resistivity of the AZO film was obtained at a higher reversed pulse time.

Understanding of the Mechanism for Laser Ablation-Assisted Patterning of Graphene/ITO Double Layers: Role of Effective Thermal Energy Transfer.

Demand for the fabrication of high-performance, transparent electronic devices with improved electronic and mechanical properties is significantly increasing for various applications. In this context, it is essential to develop highly transparent and conductive electrodes for the realization of such devices. To this end, in this work, a chemical vapor deposition (CVD)-grown graphene was transferred to both glass and polyethylene terephthalate (PET) substrates that had been pre-coated with an indium tin oxide (ITO) layer and then subsequently patterned by using a laser-ablation method for a low-cost, simple, and high-throughput process.

Effects of Radio-Frequency Sputtering Power on Low Temperature Formation of MoS₂ Thin Films on Soda-Lime Glass Substrates.

For the realization of the economical and reliable fabrication process of molybdenum disulfide (MoS²) layers, MoS² thin films were directly formed a on soda-lime glass substrate by RF sputtering and subsequent rapid thermal annealing (RTA) at a temperature range of 400-550 °C. Using scanning electron microscopy and atomic force microscopy, it was possible to investigate more stable surface morphologies of MoS² layers at lower RF sputtering powers irrespective of the RTA temperature. Even at an RTA temperature of less than 550 °C, the Raman exhibited more distinct and peaks for the MoS² layers sputtered at lower RF powers.

Thickness Effects of Radio-Frequency-Sputtered Molybdenum Disulfide Films on Soda-Lime Glass Substrates.

Molybdenum disulfide (MoS₂) films were directly formed on soda-lime glass substrates by radio-frequency (RF) sputtering and rapid thermal processing (RTP) to avoid physical exfoliation and transfer process of a MoS₂ layer. The sputtering time was adjusted in the fabrication process and the thickness effects of the MoS₂ films were investigated in terms of structural and electrical characteristics. The surface morphologies were not dependent on the film thickness but on the RF sputtering power after the film was annealed using RTP.

Low-Temperature Process for Direct Formation of MoS2 Thin Films on Soda-Lime Glass Substrates.

To obtain molybdenum disulfide (MoS₂) patterns without any mechanical problems caused by the transfer process, direct current (DC) sputtering and rapid thermal processing (RTP) were used to form MoS₂ instead of the conventional chemical vapor deposition (CVD) process. To form MoS₂ on a soda-lime glass substrate at temperatures below 600 °C, MoS₂ films were deposited at various DC sputtering powers and annealed at various temperatures from 400 °C to 550 °C. From the scanning electron microscope (SEM) and atomic force microscope (AFM) results, the surface morphologies of the MoS₂ films can be observed, depending on the sputtering power and the film thickness.

Surface Functionalization of Liquid-Phase Exfoliated, Two-Dimensional MoS₂ and WS₂ Nanosheets with 2-Mercaptoethanol.

In this work, the UV-Vis-NIR absorption spectrum of liquid-phase exfoliated two-dimensional (2D) MoS2 nanosheets, revealed two prominent peaks at 608 nm (2.04 eV) and 668 nm (1.86 eV).

A Study on the Formation of 2-Dimensional Tungsten Disulfide Thin Films on Sapphire Substrate by Sputtering and High Temperature Rapid Thermal Processing.

As direct formation of p-type two-dimensional transition metal dichalcogenides (TMDC) films on substrates, tungsten disulfide (WS2) thin films were deposited onto sapphire glass substrate through shadow mask patterns by radio-frequency (RF) sputtering at different sputtering powers ranging from 60 W to 150 W and annealed by rapid thermal processing (RTP) at various high temperatures ranging from 500 °C to 800 °C. Based on scanning electron microscope (SEM) images and Raman spectra, better surface roughness and mode dominant E12g and A1g peaks were found for WS2 thin films prepared at higher RF sputtering powers. It was also possible to obtain high mobilities and carrier densities for all WS2 thin films based on results of Hall measurements.

Laser Direct Ablation of Indium Tin Oxide Films on Both Sides of Various Substrates.

We demonstrate ablation of indium tin oxide (ITO) films onto both glass and polyethylene terephthalate (PET) substrates, using a Q-switched diode-pumped neodymium-doped yttrium vanadate laser (Nd:YVO4, λ = 1064 nm) incident on both the front and back sides of the substrate. From scanning electron microscope (SEM) images and depth profile data, ITO patterns that were laser-ablated onto glass from the back side showed a larger abrupt change in the ablated line width than those ablated from the front. However, there were only slight differences in ablated line widths due to the direction of the incident laser beam.

Direct Ablation by Laser of Single Graphene Monolayer and Graphene/Photopolymer Double Layer.

A diode-pumped Q-switched neodymium-doped yttrium vanadate (Nd:YVO4, λ = 1064 nm) laser was applied to obtain graphene patterns on a photopolymer layer by direct ablation. In the transfer process of the graphene layer, the photopolymer was employed as a graphene supporting layer and it was not removed for the simplification of the process. The laser ablation was carried out on graphene/photopolymer double layers for various beam conditions.

Ablation of graphene film by direct Nd:YVO4 laser under various beaming conditions.

Recently, graphene is gaining increasing popularity as one of the most functional materials for advanced electronic and optical devices owing to its high carrier mobility and optical transparency. Patterning the graphene calls for particular cares in line definition without carbon (C)-based residues that might be working as a leakage path. Thus, realization and processing of the graphene monolayer are very complicated and need to be stringently controlled.

A reliable extraction method for source and drain series resistances in silicon nanowire metal-oxide-semiconductor field-effect-transistors (MOSFETs) based on radio-frequency analysis.

This paper presents a new extraction method for source and drain (S/D) series resistances of silicon nanowire (SNW) metal-oxide-semiconductor field-effect transistors (MOSFETs) based on small-signal radio-frequency (RF) analysis. The proposed method can be applied to the extraction of S/D series resistances for SNW MOSFETs with finite off-state channel resistance as well as gate bias-dependent on-state resistive components realized by 3-dimensional (3-D) device simulation. The series resistances as a function of frequency and gate voltage are presented and compared with the results obtained by an existing method with infinite off-state channel resistance model.

Heteromaterial gate tunneling field-effect transistor for high-speed and radio-frequency applications.

We propose a tunneling field-effect transistor (TFET) with a heteromaterial (HM)-gate not only for low standby power (LSTP) applications, which TFETs are genuinely suitable for, but also for high-speed performance by properly adjusting intrinsic gate capacitance (C(gg)). As a result of simulations in this work, the HM-gate TFET showed better subthreshold characteristics (smaller S) at an appropriate threshold voltage (V(th)) for LSTP applications, enhancing tunneling probability by modulating the difference in the metal workfunction (φ(m)) between the source-side gate (S-gate) and the drain-side gate (D-gate). Further, the C(gg) of HM-gate TFET were extracted and compared against that of conventional TFETs having gates with various φ(m)'s.

Design and analysis of vertical-channel gallium nitride (GaN) junctionless nanowire transistors (JNT).

Vertical-channel gallium nitride (GaN) junctionless nanowire transistor (JNT) has been designed and characterized by technology computer-aided design (TCAD) simulations. Various characteristics such as wide bandgap, strong polariztion field, and high electron velocity make GaN one of the attractive materials in advanced electronics in recent times. Nanowire-structured GaN can be applicable to various transistors for enhanced electrical performances by its geometrical feature.

Effects of the duty ratio on the niobium oxide film deposited by pulsed-DC magnetron sputtering methods.

Niobium oxide (Nb2O5) films were deposited on p-type Si wafers and sodalime glasses at a room temperature using in-line pulsed-DC magnetron sputtering system with various duty ratios. The different duty ratio was obtained by varying the reverse voltage time of pulsed DC power from 0.5 to 2.

Laser direct patterning of indium tin oxide for defining a channel of thin film transistor.

In this work, using a Q-switched diode-pumped neodymium-doped yttrium vanadate (Nd:YVO4, lambda = 1064 nm) laser, a direct patterning of indium tin oxide (ITO) channel was realized on glass substrates and the results were compared and analyzed in terms of the effect of repetition rate, scanning speed on etching characteristics. The results showed that the laser conditions of 40 kHz repetition rate with a scanning speed of 500 mm/s were appropriate for the channeling of ITO electrodes. The length of laser-patterned channel was maintained at about 55 microm.

Nd:YVO4 laser direct ablation of indium tin oxide films deposited on glass and polyethylene terephthalate substrates.

A Q-switched diode-pumped neodymium-doped yttrium vanadate (Nd:YVO4, lambda = 1064 nm) laser was applied to obtain the indium tin oxide (ITO) patterns on flexible polyethylene terephthalate (PET) substrate by a direct etching method. After the ITO films were deposited on a soda-lime glass and PET substrate, laser ablations were carried out on the ITO films for various conditions and the laser ablated results on the ITO films were investigated and analyzed considering the effects of substrates on the laser etching. The laser ablated widths on ITO deposited on glass were found to be much narrower than those on ITO deposited on PET substrate, especially, at a higher scanning speed of laser beam such as 1000 mm/s and 2000 mm/s.

Semi-transparent a-IGZO thin-film transistors with polymeric gate dielectric.

We report the fabrication of semi-transparent a-IGZO-based thin-film transistors (TFTs) with crosslinked poly-4-vinylphenol (PVP) gate dielectric layers on PET substrate and thermally-evaporated Al/Ag/Al source and drain (S&D) electrodes, which showed a transmittance of 64% at a 500-nm wavelength and sheet resistance of 16.8 omega/square. The semi-transparent a-IGZO TFTs with a PVP layer exhibited decent saturation mobilities (maximum approximately 5.