Publications by authors named "Eoram Moon"
Monolayer (1L) group VI transition metal dichalcogenides (TMDs) exhibit broken inversion symmetry and strong spin-orbit coupling, offering promising applications in optoelectronics and valleytronics. Despite their direct bandgap, high absorption coefficient, and spin-valley locking in K or K' valleys, the ultra-short valley lifetime limits their room-temperature applications. In contrast, multilayer TMDs, with more absorptive layers, sacrifice the direct bandgap and valley polarization upon gaining inversion symmetry from the bilayer structure.
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- The advanced patterning process is essential for creating next-gen high-speed, low-power devices, with area-selective atomic layer deposition (AS-ALD) being a promising method, though it faces challenges in resolution and selectivity.
- This study presents a new technique called superlattice-based AS-ALD (SAS-ALD) that uses a 2D MoS-MoSe superlattice template, achieving a minimum half pitch size of sub-10 nm by controlling chemical vapor deposition (CVD) precursors.
- SAS-ALD improves selectivity through unique adsorption and diffusion processes of precursors, allowing for effective selective deposition of various materials like AlO, HfO, Ru, Te,
Van der Waals (vdW) heterostructures have drawn much interest over the last decade owing to their absence of dangling bonds and their intriguing low-dimensional properties. The emergence of 2D materials has enabled the achievement of significant progress in both the discovery of physical phenomena and the realization of superior devices. In this work, the group IV metal chalcogenide 2D-layered Ge Se is introduced as a new selection of insulating vdW material.
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