Fully Integrated Silicon Photonic Erbium-Doped Nanodiode for Few Photon Emission at Telecom Wavelengths.

Recent advancements in quantum key distribution (QKD) protocols opened the chance to exploit nonlaser sources for their implementation. A possible solution might consist in erbium-doped light emitting diodes (LEDs), which are able to produce photons in the third communication window, with a wavelength around 1550 nm. Here, we present silicon LEDs based on the electroluminescence of Er:O complexes in Si.

Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength.

An erbium-doped silicon transistor prepared by ion implantation and co-doped with oxygen is investigated by photocurrent generation in the telecommunication range. The photocurrent is explored at room temperature as a function of the wavelength by using a supercontinuum laser source working in the μW range. The 1-μm² transistor is tuned to involve in the transport only those electrons lying in the Er-O states.

GeV complexes for silicon-based room-temperature single-atom nanoelectronics.

We propose germanium-vacancy complexes (GeV) as a viable ingredient to exploit single-atom quantum effects in silicon devices at room temperature. Our predictions, motivated by the high controllability of the location of the defect via accurate single-atom implantation techniques, are based on ab-initio Density Functional Theory calculations within a parameterfree screened-dependent hybrid functional scheme, suitable to provide reliable bandstructure energies and defect-state wavefunctions. The resulting defect-related excited states, at variance with those arising from conventional dopants such as phosphorous, turn out to be deep enough to ensure device operation up to room temperature and exhibit a far more localized wavefunction.

1.54 μm photoluminescence from Er:O centers at extremely low concentration in silicon at 300 K.

The demand for single photon emitters at λ=1.54  μm, which follows from the consistent development of quantum networks based on optical fiber technologies, makes Er:O centers in Si a viable resource, thanks to the I4→I4 optical transition of Er. While its implementation in high-power applications is hindered by the extremely low emission rate, the study of such systems in the low concentration regime remains relevant for quantum technologies.

A reconfigurable cryogenic platform for the classical control of quantum processors.

The implementation of a classical control infrastructure for large-scale quantum computers is challenging due to the need for integration and processing time, which is constrained by coherence time. We propose a cryogenic reconfigurable platform as the heart of the control infrastructure implementing the digital error-correction control loop. The platform is implemented on a field-programmable gate array (FPGA) that supports the functionality required by several qubit technologies and that can operate close to the physical qubits over a temperature range from 4 K to 300 K.

Band transport across a chain of dopant sites in silicon over micron distances and high temperatures.

Macroscopic manifestations of quantum mechanics are among the most spectacular effects of physics. In most of them, novel collective properties emerge from the quantum mechanical behaviour of their microscopic constituents. Others, like superconductivity, extend a property typical of the atomic scale to macroscopic length scale.

Behavior of phosphorous and contaminants from molecular doping combined with a conventional spike annealing method.

The fabrication of future nanoscale semiconductor devices calls for precise placement of dopant atoms into their crystal lattice. Monolayer doping combined with a conventional spike annealing method provides a bottom-up approach potentially viable for large scale production. While the diffusion of the dopant was demonstrated at the start of the method, more sophisticated techniques are required in order to understand the diffusion, at the near surface, of P and contaminants such as C and O carried by the precursor, not readily accessible to direct time-of-flight secondary ion mass spectrometry measurements.

Anderson-Mott transition in arrays of a few dopant atoms in a silicon transistor.

Dopant atoms are used to control the properties of semiconductors in most electronic devices. Recent advances such as single-ion implantation have allowed the precise positioning of single dopants in semiconductors as well as the fabrication of single-atom transistors, representing steps forward in the realization of quantum circuits. However, the interactions between dopant atoms have only been studied in systems containing large numbers of dopants, so it has not been possible to explore fundamental phenomena such as the Anderson-Mott transition between conduction by sequential tunnelling through isolated dopant atoms, and conduction through thermally activated impurity Hubbard bands.

Few electron limit of n-type metal oxide semiconductor single electron transistors.

We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type metal oxide silicon SETs (n-MOSSETs) are built within a pre-industrial fully depleted silicon on insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 × 20 nm(2) is obtained by employing electron beam lithography for active and gate level patterning.

Ultra-broad and sharp-transition bandpass terahertz filters by hybridizing multiple resonances mode in monolithic metamaterials.

We present three monolithic metamaterial-based THz bandpass filters, the skewed circular slot rings, meandered slots and Jerusalem cross slots, to fit in the THz gap. These THz bandpass filters are comprised of a metal-dielectric-metal (MDM) structure that supports multiple resonances of electric dipole, magnetic dipole, and standing-wave-like modes. By exciting and further hybridizing these individual resonance modes, we demonstrate excellent performance of broad bandwidth and sharp band-edge transition beyond conventional bandpass filters.

Valley blockade quantum switching in Silicon nanostructures.

In analogy to the Coulomb and the Pauli spin blockade, based on the electrostatic repulsion and the Pauli exclusion principle respectively, the concept of valley blockade in Silicon nanostructures is explored. The valley parity operator is defined. Valley blockade is determined by the parity conservation of valley composition eigenvectors in quantum transport.

Microwave effects in silicon low dimensional nanostructures.

We review the effects of microwave irradiation on low dimensional electron systems in Silicon nanostructures. Depending on the temperature and the energy scales involved, different effects may be observed on the transition probabilities of elastic and inelastic processes. In particular two cases of 0 dimensional confinement are analyzed, i.