[Effect of hydrogen passivation on photoluminescence intensity of Si nanocrystals].

SiO/SiO2 superlattices samples were prepared on Si substrates by reactive evaporation of SiO powder in vacuum or an oxygen atmosphere. The samples were annealed in nitrogen atmosphere at high temperature subsequently. And then, H+ with a dose of 3.

[A study of depositing amorphous SiOx films vis magnetron sputtering by FTIR method].

Amorphous SiOx films were deposited on Si substrates by magnetron sputtering technology. Three absorption bands of the SiOx films were detected by Fourier transform infrared spectroscopy. The authors' investigation shows that Si-Oy-Si(4-y) (0 < y < or =4), Si6 rings, and non-bridging oxygen hole center defects were formed in the films with the sputtering power increasing.