Modifying the Electron-Trapping Process at the BiVO Surface States via the TiO Overlayer for Enhanced Water Oxidation.

BiVO is one of the most promising photoanode candidates to achieve high-efficiency water splitting. However, overwhelming charge recombination at the interface limits its water oxidation activity. In this study, we show that the water oxidation activity of the BiVO photoanode is significantly boosted by the TiO overlayer prepared by atomic layer deposition.