MNOS stack for reliable, low optical loss, Cu based CMOS plasmonic devices.

We study the electro optical properties of a Metal-Nitride-Oxide-Silicon (MNOS) stack for a use in CMOS compatible plasmonic active devices. We show that the insertion of an ultrathin stoichiometric Si(3)N(4) layer in a MOS stack lead to an increase in the electrical reliability of a copper gate MNOS capacitance from 50 to 95% thanks to a diffusion barrier effect, while preserving the low optical losses brought by the use of copper as the plasmon supporting metal. An experimental investigation is undertaken at a wafer scale using some CMOS standard processes of the LETI foundry.

Milliwatt-level fiber-coupled laser power from photonic crystal band-edge laser.

We report unprecedentedly high output powers measured from large area two-dimensional square-lattice photonic-crystal band-edge lasers (BELs), patterned by holographic lithography. In order to ensure mechanical rigidity, the BELs were fabricated in an InP-based epilayer bonded onto a fused silica substrate beforehand. The BEL devices, employing the surface-emitting Γ-point monopole band-edge mode, provide a fiber-coupled single mode output power as high as 2.