Low-Loss Buried InGaAs/InP Integrated Waveguides in the Long-Wave Infrared.

In this work, we present a photonic integrated platform based on buried InGaAs waveguides with InP cladding that operates over a large mid-infrared (mid-IR) spectral range. Thanks to wet-etch fabrication patterning and Fe doping, low propagation losses below 1.2 dB/cm (0.

Large area photonic crystal quantum cascade laser with 5 W surface-emitting power.

Room temperature surface emission is realized on a large area (1.5 mm × 1.5 mm) photonic crystal quantum cascade laser (PhC-QCL) driven under pulsed mode, at the wavelength around 8.

Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy.

Nano-heteroepitaxial growth of GaAs on Si(001) by metal organic vapor phase epitaxy was investigated to study emerging materials phenomena on the nano-scale of III-V/Si interaction. Arrays of Si nano-tips (NTs) embedded in a SiO matrix were used as substrates. The NTs had top Si openings of 50-90 nm serving as seeds for the selective growth of GaAs nano-crystals (NCs).

Sub-300-femtosecond operation from a MIXSEL.

Peak power scaling of semiconductor disk lasers is important for many applications, but their complex pulse formation mechanism requires a rigorous pulse characterization to confirm stable fundamental modelocking. Here we fully confirm sub-300-fs operation of Modelocked Integrated eXternal-cavity Surface Emitting Lasers (MIXSELs) with record high peak power at gigahertz pulse repetition rates. A strain-compensated InGaAs quantum well gain section enables an emission wavelength in the range of Yb-doped amplifiers at ≈1030 nm.

Gigahertz self-referenceable frequency comb from a semiconductor disk laser.

We present a 1.75-GHz self-referenceable frequency comb from a vertical external-cavity surface-emitting laser (VECSEL) passively modelocked with a semiconductor saturable absorber mirror (SESAM). The VECSEL delivers 231-fs pulses with an average power of 100 mW and is optimized for stable and reliable operation.

Quantum cascade laser in a master oscillator power amplifier configuration with Watt-level optical output power.

We present the design and realization of short-wavelength (λ = 4.53 μm) and buried-heterostructure quantum cascade lasers in a master oscillator power amplifier configuration. Watt-level, singlemode peak optical output power is demonstrated for typical non-tapered 4 μm wide and 5.

Design and fabrication of photonic crystal quantum cascade lasers for optofluidics.

We present novel designs and demonstrate a fabrication platform for electrically driven lasers based on high quality-factor photonic crystal cavities realized in mid-infrared quantum cascade laser material. The structures are based on deep-etched ridges with their sides perforated with photonic crystal lattice, using focused ion beam milling. In this way, a photonic gap is opened for the emitted TM polarized light.

Continuous-wave operation of a broadly tunable thermoelectrically cooled external cavity quantum-cascade laser.

Continuous-wave operation of an external cavity quantum-cascade laser on a thermoelectric cooler is reported. The active region of the gain element was based on a bound-to-continuum design emitting near 5.15 microm.

Continuous wave operation of a mid-infrared semiconductor laser at room temperature.

Continuous wave operation of quantum cascade lasers is reported up to a temperature of 312 kelvin. The devices were fabricated as buried heterostructure lasers with high-reflection coatings on both laser facets, resulting in continuous wave operation with optical output power ranging from 17 milliwatts at 292 kelvin to 3 milliwatts at 312 kelvin, at an emission wavelength of 9.1 micrometers.