A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress.

This study aimed to comprehensively understand the performance and degradation of both p- and n-channel vertical double diffused MOS (VDMOS) transistors under bias temperature stress. Conducted experimental investigations involved various stress conditions and annealing processes to analyze the impacts of BT stress on the formation of oxide trapped charge and interface traps, leading to threshold voltage shifts. Findings revealed meaningful threshold voltage shifts in both PMOS and NMOS devices due to stresses, and the subsequent annealing process was analyzed in detail.

Xenon-filled diode performance under influence of low doses of gamma radiation.

This paper presents a detailed statistical analysis of experimental results of dynamic breakdown voltage and electrical breakdown time delay for xenon-filled diode. These quantities have a stochastic nature and they were measured in the cases when the xenon-filled diode was and was not exposed to a gamma radiation source, with exposure dose rate 7.7⋅10 C/(kg⋅s).

INVESTIGATION OF XENON-FILLED TUBE BREAKDOWN VOLTAGE AND DELAY RESPONSE AS POSSIBLE DOSIMETRIC PARAMETERS FOR SMALL GAMMA RAY AIR KERMA RATES.

This paper presents experimental results of dynamic breakdown voltage and delay response as functions of gamma ray air kerma rate for xenon-filled tube at 2.7 mbar pressure. Gamma ray air kerma rate range was considered from 123 nGy h-1 up to 12.