A LN/Si-Based SAW Pressure Sensor.

Surface Acoustic Wave (SAW) sensors are small, passive and wireless devices. We present here the latest results obtained in a project aimed at developing a SAW-based implantable pressure sensor, equipped with a well-defined, 30 μm-thick, 4.7 mm-in-diameter, Lithium Niobate (LN) membrane.

Acoustic resonator based on periodically poled lithium niobate ridge.

The constant improvement of industrial needs to face modern telecommunication challenges leads to the development of novel transducer principles as alternatives to SAW and BAW solutions. The main technological limits of SAW (short-circuit between electrodes) and BAW (precise thickness control) solutions can be overcome by a new kind of transducer based on periodically poled ferroelectric substrate. The approach proposed in this paper exploits a ridge structure combined with a periodically poled transducer (PPT), allowing for the excitation of highly coupled modes unlike previously published results on planar PPTs.

Acoustic wave filter based on periodically poled lithium niobate.

Solutions for the development of compact RF passive transducers as an alternative to standard surface or bulk acoustic wave devices are receiving increasing interest. This article presents results on the development of an acoustic band-pass filter based on periodically poled ferroelectric domains in lithium niobate. The fabrication of periodically poled transducers (PPTs) operating in the range of 20 to 650 MHz has been achieved on 3-in (76.

Prediction and measurement of boundary waves at the interface between LiNbO3 and silicon.

Interface acoustic waves (IAWs) propagate along the boundary between two perfectly bonded solids. For a leakage- free IAW, all displacement fields must be evanescent along the normal to the boundary inside both solids, but leaky IAWs may also exist depending on the selected combination of materials. When at least one of the bonded solids is a piezoelectric material, the IAW can be excited by an interdigital transducer (IDT) located at the interface, provided one can fabricate the transducer and access the electrical contacts.