Thorough Wide-Temperature-Range Analysis of Pt/SiC and Cr/SiC Schottky Contact Non-Uniformity.

This paper evaluates the non-uniformity degree of platinum and chromium Schottky contacts on silicon carbide. The forward characteristics of experimental samples were acquired in a wide, 60-500 K, temperature range. Microstructural and conventional electrical characterizations were performed, revealing the presence of inhomogeneities on the contact surface.

400 °C Sensor Based on Ni/4H-SiC Schottky Diode for Reliable Temperature Monitoring in Industrial Environments.

This paper presents a high-temperature probe suitable for operating in harsh industrial applications as a reliable alternative to low-lifespan conventional solutions, such as thermocouples. The temperature sensing element is a Schottky diode fabricated on 4H-SiC wafers, with Ni as the Schottky metal, which allows operation at temperatures up to 400 °C, with sensitivities over 2 mV/°C and excellent linearity (R > 99.99%).