Aero-ZnS prepared by physical vapor transport on three-dimensional networks of sacrificial ZnO microtetrapods.

Aeromaterials represent a class of increasingly attractive materials for various applications. Among them, aero-ZnS has been produced by hydride vapor phase epitaxy on sacrificial ZnO templates consisting of networks of microtetrapods and has been proposed for microfluidic applications. In this paper, a cost-effective technological approach is proposed for the fabrication of aero-ZnS by using physical vapor transport with SnS crystals and networks of ZnO microtetrapods as precursors.

Ultralow voltage (1V) electrical switching of SnS thin films driven by a vertical electric field.

In this paper, we show in a series of experiments on 10 nm thick SnS thin film-based back-gate transistors that in the absence of the gate voltage, the drain current versus drain voltage (-) dependence is characterized by a weak drain current and by an ambipolar transport mechanism. When we apply a gate voltage as low as 1V, the current increases by several orders of magnitude and the-dependence changes drastically, with the SnS behaving as a-type semiconductor. This happens because the current flows from the source (S) to the drain (D) electrode through a discontinuous superficial region of the SnS film when no gate voltage is applied.

Spin-Coating and Aerosol Spray Pyrolysis Processed ZnMgO Films for UV Detector Applications.

A series of ZnMgO thin films with ranging from 0 to 0.8 were prepared by spin coating and aerosol spray pyrolysis deposition on Si and quartz substrates. The morphology, composition, nano-crystalline structure, and optical and vibration properties of the prepared films were studied using scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD), and optical and Raman scattering spectroscopy.

Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade.

In this paper, we present for the first time a field-effect-transistor (FET) having a 10 nm thick tin sulfide (SnS) channel fabricated at the wafer scale with high reproducibility. SnS-based FETs are in on-state for increasing positive back-gate voltages up to 6 V, whereas the off-state is attained for negative back-gate voltages not exceeding -6 V, the on/off ratio being in the range 10-10depending on FET dimensions. The SnS FETs show a subthreshold slope (SS) below 60 mV/decade thanks to the in-plane ferroelectricity of SnS and attaining a minimum value SS = 21 mV/decade.

The microwave properties of tin sulfide thin films prepared by RF magnetron sputtering techniques.

In this paper we present the microwave properties of tin sulfide (SnS) thin films with the thickness of just 10 nm, grown by RF magnetron sputtering techniques on a 4 inch silicon dioxide/high-resistivity silicon wafer. In this respect, interdigitated capacitors in coplanar waveguide technology were fabricated directly on the SnS film to be used as both phase shifters and detectors, depending on the ferroelectric or semiconductor behaviour of the SnS material. The ferroelectricity of the semiconducting thin layer manifests itself in a strong dependence of the electrical permittivity on the applied DC bias voltage, which induces a phase shift of 30 degrees mmat 1 GHz and of 8 degrees mmat 10 GHz, whereas the transmission losses are less than 2 dB in the frequency range 2-20 GHz.

Band tail state related photoluminescence and photoresponse of ZnMgO solid solution nanostructured films.

A series of Zn Mg O thin films with the composition range = 0.00-0.40 has been prepared by sol-gel spin coating on Si substrates with a post-deposition thermal treatment in the temperature range of 400-650 °C.

Preparation of poly(N-vinylpyrrolidone)-stabilized ZnO colloid nanoparticles.

We propose a method for the synthesis of a colloidal ZnO solution with poly(N-vinylpyrrolidone) (PVP) as stabilizer. Stable colloidal solutions with good luminescence properties are obtained by using PVP as stabilizer in the synthesis of ZnO nanoparticles by a sol-gel method assisted by ultrasound. Nanoparticles with sizes of 30-40 nm in a PVP matrix are produced as a solid product.