Polycrystalline InGaO Thin-Film Transistors with Coplanar Structure Exhibiting Average Mobility of ≈78 cm V s and Excellent Stability for Replacing Current Poly-Si Thin-Film Transistors for Organic Light-Emitting Diode Displays.

Highly ordered polycrystalline indium gallium oxide (PC-IGO) film is obtained by the crystallization of room temperature sputtered amorphous IGO on a hot plate at 350 °C for 1 h and then annealed for 1 h in an N O environment. A high-density PC-IGO of ≈7.15 g cm with reduced oxygen vacancy (≈14.

Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit.

Power devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on "bulk" and "single-crystal" semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on "thin-films" of "amorphous" oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon).

Neurophysiological mechanisms of conduction impairment of the auditory nerve during cerebellopontine angle surgery.

Objective: Intraoperative auditory brainstem response (ABR)-monitoring is useful for hearing preservation in patients undergoing cerebellopontine angle surgery. Prolongation of the latency of wave V, for example, is observed under surgical stress such as cerebellar retraction. We analyzed intraoperative ABR findings to study the neurophysiological mechanism(s) underlying latency prolongation.