Atomic scale volume and grain boundary diffusion elucidated by in situ STEM.

Diffusion is one of the most important phenomena studied in science ranging from physics to biology and, in abstract form, even in social sciences. In the field of materials science, diffusion in crystalline solids is of particular interest as it plays a pivotal role in materials synthesis, processing and applications. While this subject has been studied extensively for a long time there are still some fundamental knowledge gaps to be filled.

Thermally Stable Nanotwins: New Heights for Cu Mechanics.

Nanocrystalline and nanotwinned materials achieve exceptional strengths through small grain sizes. Due to large areas of crystal interfaces, they are highly susceptible to grain growth and creep deformation, even at ambient temperatures. Here, ultrahigh strength nanotwinned copper microstructures have been stabilized against high temperature exposure while largely retaining electrical conductivity.

Mechanisms of Fluorine-Induced Separation of Mass Interference during TOF-SIMS Analysis.

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is one of very few analytical techniques allowing sample chemical structure to be characterized in three-dimensional (3D) with nanometer resolution. Due to the excellent sensitivity in the order of ppm-ppb and capability of detecting all ionized elements and molecules, TOF-SIMS finds many applications for analyzing nanoparticle-containing systems and thin films used in microdevices for new energy applications, microelectronics, and biomedicine. However, one of the main drawbacks of this technique is potential mass interference between ions having the same or similar masses, which can lead to data misinterpretation.

High Sensitivity of Fluorine Gas-Assisted FIB-TOF-SIMS for Chemical Characterization of Buried Sublayers in Thin Films.

In this work, we present the potential of high vacuum-compatible time-of-flight secondary ion mass spectrometry (TOF-SIMS) detectors, which can be integrated within focused ion beam (FIB) instruments for precise and fast chemical characterization of thin films buried deep under the sample surface. This is demonstrated on complex multilayer systems composed of alternating ceramic and metallic layers with thicknesses varying from several nanometers to hundreds of nanometers. The typical problems of the TOF-SIMS technique, that is, low secondary ion signals and mass interference between ions having similar masses, were solved using a novel approach of co-injecting fluorine gas during the sample surface sputtering.

Elemental Characterization of Al Nanoparticles Buried under a Cu Thin Film: TOF-SIMS vs STEM/EDX.

In this work, we present a comprehensive comparison of time-of-flight secondary ion mass spectrometry (TOF-SIMS) and scanning transmission electron microscopy combined with energy-dispersive X-ray spectroscopy (STEM/EDX), which are currently the most powerful elemental characterization techniques in the nano- and microscale. The potential and limitations of these methods are verified using a novel dedicated model sample consisting of Al nanoparticles buried under a 50 nm thick Cu thin film. The sample design based on the low concentration of nanoparticles allowed us to demonstrate the capability of TOF-SIMS to spatially resolve individual tens of nanometer large nanoparticles under ultrahigh vacuum (UHV) as well as high vacuum (HV) conditions.