Publications by authors named "Ellingboe A"

Background: Anti-angiogenic agents, such as nintedanib and ramucirumab, when combined with docetaxel, are subsequent treatment options in patients with non-small cell lung cancer (NSCLC) who have failed on first-line chemotherapy or immunochemotherapy. However, to date, there are no validated predictive biomarkers for efficacy of anti-angiogenic therapies in this setting. The aim of this study was to explore whether genetic or genomic markers, alone or combined with clinical covariates, could be used to predict overall survival (OS) in patients with NSCLC who are eligible for treatment with nintedanib plus docetaxel.

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Article Synopsis
  • - The study explores a novel magnetized plasma-enhanced atomic layer deposition (PEALD) process for creating high-quality silicon nitride (SiN) films, which are important in various semiconductor applications.
  • - The magnetized plasma increases the growth rate and improves film quality, leading to lower surface roughness and better etch resistance compared to non-magnetized plasma.
  • - Using this magnetized approach allows for improved electrical properties and superior step coverage in high-aspect-ratio trench patterns, enhancing the overall performance of the deposited SiN films.
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Plasma enhanced atomic layer deposition (PEALD) of silicon nitride (SiN) using very high frequency (VHF, 162 MHz) plasma source was investigated at the process temperatures of 100, 200, and 300 °C. Two aminosilane precursors having different numbers of amino ligands, bis(-butylamino)silane (BTBAS) and di(-butylamino)silane (DSBAS), were used as Si precursors. A comparative study was also conducted to verify the effect of the number of amino ligands on the properties of SiN film.

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Low-hydrogen-containing amorphous silicon (a-Si) was deposited at a low temperature of 80 °C using a very high frequency (VHF at 162 MHz) plasma system with multi-split electrodes. Using the 162 MHz VHF plasma system, a high deposition rate of a-Si with a relatively high deposition uniformity of 6.7% could be obtained due to the formation of high-ion-density (>10 cm) plasma with SiH and a lack of standing waves by using small multi-split electrodes.

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Silicon nitrides, deposited by capacitively coupled plasma (CCP)-type plasma enhanced atomic layer deposition (PEALD), are generally applied to today's nanoscale semiconductor devices, and are currently being investigated in terms of their potential applications in the context of flexible displays, etc. During the PEALD process, 13.56 MHz rf power is generally employed for the generation of reactive gas plasma.

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The spread of multidrug-resistant bacteria is an ever-growing concern, particularly among Gram-negative bacteria because of their intrinsic resistance and how quickly they acquire and spread new resistance mechanisms. Treating infections caused by Gram-negative bacteria is a challenge for medical practitioners and increases patient mortality and cost of care globally. This vulnerability, along with strategies to tackle antimicrobial resistance development, prompts the development of new antibiotic agents and exploration of alternative treatment options.

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Depositing a barrier film for moisture protection without damage at a low temperature is one of the most important steps for organic-based electronic devices. In this study, the authors investigated depositing thin, high-quality SiN film on organic-based electronic devices, specifically, very high-frequency (162 MHz) plasma-enhanced chemical vapor deposition (VHF-PECVD) using a multi-tile push-pull plasma source with a gas mixture of NH/SiH at a low temperature of 80 °C. The thin deposited SiN film exhibited excellent properties in the stoichiometry, chemical bonding, stress, and step coverage.

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ABSTRACT An isolate of Magnaporthe grisea, Tm4, from a rice field in Texas was crossed with a fertile laboratory strain, 70-6. The progenies showed segregation of avirulence/virulence on rice cvs. Newbonnet, Lemont, Lebonnet, Leah, and Katy.

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The identification of the autonomous or transposase-encoding element of the Mutator (Mu) transposable element system of maize is necessary to the characterization of the system. We reported previously that a transcript homologous to the internal region of the MuA element is associated with activity of the Mutator system. We describe here the cloning of another Mu element, designated MuA2, that cosegregates with Mutator activity as assayed by somatic instability of the a1-Mum2 allele.

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A Mu element, which we designated MuA, was cloned from a maize line with a Mutator background by its homology to the terminal inverted repeats of Mu1. Like other Mu elements, MuA has terminal inverted repeats of approximately 200 bp which are homologous to those of Mu1, but the internal region is different. MuA is unique in several aspects, being approximately 5.

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Low frequency, integrative transformation of three fertile hermaphroditic strains of Magnaporthe grisea has been achieved using plasmid pAN7-1 and cosmid pAN7-2, which contain an Escherichia coli hygromycin B phosphotransferase gene linked to Aspergillus nidulans regulatory sequences.

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The Rp1 gene of maize determines resistance to the leaf rust pathogen Puccinia sorghi. X-ray treatment of heterozygous (Rp1 Oy/rp1 oy) maize embryos generated seedlings with yellow sectors lacking. Rp1.

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There are many naturally occurring variants at the Ml-a locus in barley that confer resistance to the powdery mildew fungus Erysiphe graminis f. sp. hordei.

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Two sets of diploid cultures of S. commune were observed for sectoring due to haploidization or recombination. Each set consisted of compatible and common-AB diploids otherwise almost isogenic.

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Forty-eight useful new mutations of S. commune were obtained by mutagenesis with N-methyl-N'-nitro-N-nitrosoguanidine. Their requirements and meiotic linkage relationships to each other and previously mapped areas were investigated.

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Common-AB diploids with several heterozygous biochemical markers were mated with appropriately marked haploid strains of S. commune in an effort to obtain compatible, common-A, and common-B diploid progeny with biochemical markers identical to those of the common-AB parent. The spores from these crosses were germinated on minimal medium.

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A slow in vivo uptake of cobalt from a growth medium resulted in an increase in density of mitochondria of Schizophyllum commune. Differential labeling of donor and resident mycelia, and subsequent analysis of resident mycelia surrounding donor implants, detected cobalt-dense mitochondria and demonstrated exchange of mitochondria after hyphal fusion. Transfer of mitochondria occurred in fully compatible, common-A, and common-AB matings, but was not detected in common-B matings of the tetrapolar Basidiomycete S.

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Differential labeling of mates, based on the selective uptake of cobalt by mitochondria of one of the partners, has been used to determine visually by means of phase-contrast microscopy whether transfer of mitochondria occurs after hyphal fusion. Compatible and incompatible matings of the tetrapolar basidiomycete, Schizophyllum commune, were studied. Transfer was detectable in common-A, common-AB, and fully compatible matings.

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