Circumventing the miscibility gap in InGaN nanowires emitting from blue to red.

Widegap III-nitride alloys have enabled new classes of optoelectronic devices including light emitting diodes, lasers and solar cells, but it is admittedly challenging to extend their operating wavelength to the yellow-red band. This requires an increased In content x in In Ga N, prevented by the indium segregation within the miscibility gap. Beyond the known advantage of dislocation-free growth on dissimilar substrates, nanowires may help to extend the compositional range of InGaN.