Anisotropic strain in epitaxial single-layer molybdenum disulfide on Ag(110).

In this work we prove that ordered single-layer MoS can be grown epitaxially on Ag(110), despite the different crystalline geometry of adsorbate and substrate. A comprehensive investigation of electronic and structural features of this interface is carried out by combining several techniques. Photoelectron diffraction experiments show that only two mirror crystalline domains coexist in equal amount in the grown layer.

The adsorption of silicon on an iridium surface ruling out silicene growth.

The adsorption of Si atoms on a metal surface might proceed through complex surface processes, whose rate is determined differently by factors such as temperature, Si coverage, and metal cohesive energy. Among other transition metals, iridium is a special case since the Ir(111) surface was reported first, in addition to Ag(111), as being suitable for the epitaxy of silicene monolayers. In this study we followed the adsorption of Si on the Ir(111) surface via high resolution core level photoelectron spectroscopy, starting from the clean metal surface up to a coverage exceeding one monolayer, in a temperature range between 300 and 670 K.