Publications by authors named "Elisabeth A Duijnstee"

Further improvements in perovskite solar cells require better control of ionic defects in the perovskite photoactive layer during the manufacturing stage and their usage. Here we report a living passivation strategy using a hindered urea/thiocarbamate bond Lewis acid-base material (HUBLA), where dynamic covalent bonds with water and heat-activated characteristics can dynamically heal the perovskite to ensure device performance and stability. Upon exposure to moisture or heat, HUBLA generates new agents and further passivates defects in the perovskite.

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Formamidinium lead triiodide (FAPbI) is the leading candidate for single-junction metal-halide perovskite photovoltaics, despite the metastability of this phase. To enhance its ambient-phase stability and produce world-record photovoltaic efficiencies, methylenediammonium dichloride (MDACl) has been used as an additive in FAPbI. MDA has been reported as incorporated into the perovskite lattice alongside Cl.

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Charge carrier mobility is a fundamental property of semiconductor materials that governs many electronic device characteristics. For metal halide perovskites, a wide range of charge carrier mobilities have been reported using different techniques. Mobilities are often estimated via transient methods assuming an initial charge carrier population after pulsed photoexcitation and measurement of photoconductivity via non-contact or contact techniques.

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Space-charge-limited current (SCLC) measurements have been widely used to study the charge carrier mobility and trap density in semiconductors. However, their applicability to metal halide perovskites is not straightforward, due to the mixed ionic and electronic nature of these materials. Here, we discuss the pitfalls of SCLC for perovskite semiconductors, and especially the effect of mobile ions.

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Heterointerfaces coupling complex oxides exhibit coexisting functional properties such as magnetism, superconductivity, and ferroelectricity, often absent in their individual constituent. SrTiO (STO), a canonical band insulator, is an active constituent of such heterointerfaces. Temperature-, strain-, or mechanical stress-induced ferroelastic transition leads to the formation of narrow domains and domain walls in STO.

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The parallel-plate capacitor equation is widely used in contemporary material research for nanoscale applications and nanoelectronics. To apply this equation, flat and smooth electrodes are assumed for a capacitor. This essential assumption is often violated for thin-film capacitors because the formation of nanoscale roughness at the electrode interface is very probable for thin films grown via common deposition methods.

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