Evaluation of Objective Functions for the Optimal Design of an Assistive Robot.

The number of individuals with upper or lower extremities dysfunction (ULED) has considerably increased in the past few decades, resulting in a high economic burden for their families and society. Individuals with ULEDs require assistive robots to fulfill all their activities of daily living (ADLs). However, a theory for the optimal design of assistive robots that reduces energy consumption while increasing the workspace is unavailable.

Kinematics and Workspace Analysis of xArm6 Robot for Activities of Daily Living.

Recent statistics reveal that the number of individuals with upper or lower extremity dysfunctions has increased alarmingly. It is estimated that approximately 3.3 million Americans use a wheelchair, with an expected 2 million new wheelchair users every year.

Sc2S@C(s)(10528)-C72: a dimetallic sulfide endohedral fullerene with a non isolated pentagon rule cage.

A non isolated pentagon rule metallic sulfide clusterfullerene, Sc(2)S@C(s)(10528)-C(72), has been isolated from a raw mixture of Sc(2)S@C(2n) (n = 35-50) obtained by arc-discharging graphite rods packed with Sc(2)O(3) and graphite powder under an atmosphere of SO(2) and helium. Multistage HPLC methods were utilized to isolate and purify the Sc(2)S@C(72). The purified Sc(2)S@C(s)(10528)-C(72) was characterized by mass spectrometry, UV-vis-NIR absorption spectroscopy, cyclic voltammetry, and single-crystal X-ray diffraction.

Direct grafting of long-lived luminescent indicator dyes to GaN light-emitting diodes for chemical microsensor development.

Two new methods for covalent functionalization of GaN based on plasma activation of its surface are presented. Both of them allow attachment of sulfonated luminescent ruthenium(II) indicator dyes to the p- and n-type semiconductor as well as to the surface of nonencapsulated chips of GaN light-emitting diodes (blue LEDs). X-ray photoelectron spectroscopy analysis of the functionalized semiconductor confirms the formation of covalent bonds between the GaN surface and the dye.

Microsensors based on GaN semiconductors covalently functionalized with luminescent Ru(II) complexes.

Covalent tethering of a Ru(II) dye to gallium nitride surfaces has been accomplished as a key step in the development of innovative sensing devices in which the indicator support (semiconductor) plays the role of both support and excitation source. Luminescence emission decays and time-resolved emission spectra confirm the presence of the dye on the semiconductor surfaces, while X-ray photoelectron spectroscopy proves its covalent bonding. The O(2) sensitivity of the new device is comparable to those of other ruthenium-based sensor systems.

Optical sensors based on III-nitride photodetectors for flame sensing and combustion monitoring.

Combustion control requires visible photodetectors to sense the CH* CL emission at 430 nm that combined with a visible-blind UV photodetector allows us to obtain the OH*/CH* ratio. UV-visible P-InGaN/GaN multiple quantum well-N photodiodes with 15-18 mm2 areas were fabricated to conduct OH* (308 nm) and CH* CL detection without external filters. Bandpass detectors at 230-390 nm and 360-450 nm presented linear responses over five decades and rejection ratios >10(3) at 430 and 308 nm, respectively.