Transparent (Ni,Au)/ZnO:Al-Based Ohmic Contacts to p-Type GaN as an Insight into the Role of Ni and Au in Standard p-Type GaN Contacts.

In this work, Ni/ZnO:Al and Au/ZnO:Al structures are proposed as efficient ohmic contacts to p-GaN. Through a careful selection of deposition parameters and annealing environment, we not only achieve the formation of high-quality ohmic contacts but also gain insights into the interfacial reactions, enhancing the understanding of conventional Ni/Au contact formation on p-GaN. In particular, the notion that the presence of NiO at the interface is enough for an ohmic contact to form is challenged by showing that in fact it has to be NiO formed at the interface from metallic Ni and additional oxygen.

Pros and Cons of (NH)S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode.

The impact of wet treatment using an (NH)S-alcohol solution on the interface state of the p-GaN/Ni/Au/Pt contact system and laser diode processing was investigated. Sulfur wet cleaning resulted in reduced surface roughness and contact resistivity. The lowest specific contact resistance ( < 1 × 10 Ω·cm) was achieved with samples treated with an (NH)S-isopropanol solution, whereas the highest resistivity ( = 3.

Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes.

In this paper, we investigate the effect of Pd thickness and heat treatment on Pd/Ni/Au/p-GaN metal contacts. The as-deposited samples exhibit a smooth morphology and non-linear I-V characteristics. Heat treatment in a N atmosphere leads to degradation of the contact microstructure, resulting in diffusion of Ga, void formation on the interface and mixing of metals.

Ohmic Contact to n-GaN Using RT-Sputtered GaN:O.

One of the key issues in GaN-based devices is the resistivity and technology of ohmic contacts to n-type GaN. This work presents, for the first time, effective intentional oxygen doping of sputtered GaN films to obtain highly conductive n-GaN:O films. We have developed a novel and simple method to obtain these films.

InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications.

The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and wet etching process: inductively coupled plasma-reactive ion etching in chlorine, followed by wet etching in tetramethylammonium hydroxide (TMAH). For the dry etching stage, an optimized procedure was used.

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts.

AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.

Surface Properties of Nanostructured, Porous ZnO Thin Films Prepared by Direct Current Reactive Magnetron Sputtering.

In this paper, the results of detailed X-ray photoelectron spectroscopy (XPS) studies combined with atomic force microscopy (AFM) investigation concerning the local surface chemistry and morphology of nanostructured ZnO thin films are presented. They have been deposited by direct current (DC) reactive magnetron sputtering under variable absolute Ar/O₂ flows (in sccm): 3:0.3; 8:0.

Multilayer metal/metal-oxide diffractive structure for photonic temperature sensing.

We designed and fabricated multilayer metal/metal-oxide surface relief diffractive grating structures by growing alternating Pt and SnO(x) layers. Optical interrogation at 633 nm reveals the temperature dependence of their reflection and transmission diffractive effects. This function is explored here in the context of a remote, spatially localized, photonic temperature sensing operation, achieving sensitivity of 10% per °C for the zeroth-order in the transmission mode.

Determination of thermal conductivity of thin layers used as transparent contacts and antireflection coatings with a photothermal method.

A photothermal experiment with mirage detection was used to determine the thermal conductivity of various thin films deposited on semiconductor substrates. The first type consisted of conducting oxide films: ZnO and CdO deposited on GaSb:Te, while the other contained high dielectric constant HfO(2) layers on Si. All films were fabricated using a magnetron sputtering technique.

Optical characterizations of ZnO, SnO2, and TiO2 thin films for butane detection.

The optogeometric properties of various sensitive thin films involved in gas sensing applications are investigated by using the m-line technique and atomic force microscopy. Variations of these optical properties are studied under butane and ozone exposure.