Publications by authors named "Ekaterina V Astrova"

A study of the electrochemical characteristics of titanium oxyfluoride obtained with the direct interaction of titanium with hydrofluoric acid is reported. Two materials T1 and T2 synthesized under different conditions in which some TiF is formed in T1 are compared. Both materials exhibit conversion-type anode properties.

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Relationship between the rate of electrochemical formation of mesoporous Si and the crystallographic directions has been studied by local anodization of wafers through a mask having the form of narrow long wedges radiating from the center in all directions ('wagon-wheel' mask). The etching rates were found from the side etching under the thin transparent n-Si mask. On p+-substrates of various orientation diagrams characterizing the distribution of pore formation rates over different directions in the wafer plane were constructed for the first time.

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We report on what is believed to be the first example of an ultrawide, bandpass filter, based on a high-contrast multicomponent one-dimensional Si photonic crystal (PC). The effect of the disappearance of a limited number of flat stopbands and their replacement with extended passbands is demonstrated over a wide IR range. The passbands obtained exhibit a high transmission of 92% to 96% and a substantial bandwidth of 1800 nm, which is spectrally flat within the passband.

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Synopsis of recent research by authors named "Ekaterina V Astrova"

  • - Ekaterina V Astrova's recent research predominantly focuses on materials science and electrochemistry, particularly in the context of lithium-ion batteries and silicon-based structures.
  • - A significant study published in March 2023 explores the electrochemical properties of titanium oxyfluoride materials, revealing their potential as effective conversion-type anodes in batteries.
  • - Earlier works included innovative techniques to investigate the anisotropy of porous silicon formation and the development of ultrawide bandpass filters using photonic crystals, contributing to advancements in semiconductor technology and optical applications.

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