Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic.

Redox-based resistive switching random access memory (ReRAM) offers excellent properties to implement future non-volatile memory arrays. Recently, the capability of two-state ReRAMs to implement Boolean logic functionality gained wide interest. Here, we report on seven-states Tantalum Oxide Devices, which enable the realization of an intrinsic modular arithmetic using a ternary number system.

Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices.

Redox-based resistive switching devices (ReRAM) are considered key enablers for future non-volatile memory and logic applications. Functionally enhanced ReRAM devices could enable new hardware concepts, e.g.

Low-current operations in 4F(2)-compatible Ta2O5-based complementary resistive switches.

Complementary resistive switches (CRS), which consist of two anti-serially connected bipolar switching ReRAM cells, can reduce sneak path currents in passive crossbar arrays. However, the high operation current restrains the implementation of the CRS device. In this article, we present low current operation (<300 μA) of vertically stacked, 4F(2)-compatible Ta2O5-based CRS devices exhibiting two terminals.

Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches.

Redox-based resistive memory cells exhibit changes of OFF or intermediate resistance values over time and even ON states can be completely lost in certain cases. The stability of these resistance states and the time until resistance loss strongly depends on the materials system. On the basis of electrical measurements and chemical analysis we found a viable explanation for these volatile resistance states (VRSs) in Ag-GeSx-based electrochemical metallization memory cells and identified a technological application in the field of crossbar memories.

Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/nanoelectronic logic and memory architectures.

Complementary resistive switches based on two anti-serially connected Ag/GeSx/Pt devices were studied. The main focus was placed on the pulse mode properties as typically required in memory and logic applications. A self-designed measurement setup was applied to access each CRS part-cell individually.

An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing.

We report on the implementation of an Associative Capacitive Network (ACN) based on the nondestructive capacitive readout of two Complementary Resistive Switches (2-CRSs). ACNs are capable of performing a fully parallel search for Hamming distances (i.e.

Complementary resistive switches for passive nanocrossbar memories.

On the road towards higher memory density and computer performance, a significant improvement in energy efficiency constitutes the dominant goal in future information technology. Passive crossbar arrays of memristive elements were suggested a decade ago as non-volatile random access memories (RAM) and can also be used for reconfigurable logic circuits. As such they represent an interesting alternative to the conventional von Neumann based computer chip architectures.