Conductive rutile TiO has received considerable attention recently due to multiple applications. However, the permittivity in conductive, reduced or doped TiO appears to cause controversy with reported values in the range 100-10,000. In this work, we propose a method for measurements of the permittivity in conductive, n-type TiO that involves: (i) hydrogen ion-implantation to form a donor concentration peak at a known depth, and (ii) capacitance-voltage measurements for donor profiling.
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