Plasmonic properties of aluminium nanowires in amorphous silicon.

Plasmonic structures can help enhance optical activity in the ultraviolet (UV) region and therefore enhancing photocatalytic reactions and the detection of organic and biological species. Most plasmonic structures are composed of Ag or Au. However, producing structures small enough for optical activity in the UV region has proved difficult.

Disorder-Induced Ordering in Gallium Oxide Polymorphs.

Polymorphs are common in nature and can be stabilized by applying external pressure in materials. The pressure and strain can also be induced by the gradually accumulated radiation disorder. However, in semiconductors, the radiation disorder accumulation typically results in the amorphization instead of engaging polymorphism.

Nitrogen-Doped CuO Thin Films for Photovoltaic Applications.

Cuprous oxide (CuO) is a p-type semiconductor with high optical absorption and a direct bandgap of about 2.1 eV, making it an attractive material for photovoltaic applications. For a high-performance photovoltaic device, the formation of low-resistivity contacts on CuO thin films is a prerequisite, which can be achieved by, for instance, nitrogen doping of CuO in order to increase the carrier concentration.

Metal Oxide Thin-Film Heterojunctions for Photovoltaic Applications.

Silicon-based tandem solar cells incorporating low-cost, abundant, and non-toxic metal oxide materials can increase the conversion efficiency of silicon solar cells beyond their conventional limitations with obvious economic and environmental benefits. In this work, the electrical characteristics of a metal oxide thin-film heterojunction solar cell based on a cuprous oxide (Cu₂O) absorber layer were investigated. Highly Al-doped n-type ZnO (AZO) and undoped p-type Cu₂O thin films were prepared on quartz substrates by magnetron sputter deposition.

Improving carrier transport in CuO thin films by rapid thermal annealing.

Cuprous oxide (CuO) is a promising material for large scale photovoltaic applications. The efficiencies of thin film structures are, however, currently lower than those for structures based on CuO sheets, possibly due to their poorer transport properties. This study shows that post-deposition rapid thermal annealing (RTA) of CuO films is an effective approach for improving carrier transport in films prepared by reactive magnetron sputtering.

Diffusivity of the double negatively charged mono-vacancy in silicon.

Lightly-doped silicon (Si) samples of n-type conductivity have been irradiated with 2.0 MeV [Formula: see text] ions at a temperature of 30 K and characterized in situ by deep level transient spectroscopy (DLTS) measurements using an on-line setup. Migration of the Si mono-vacancy in its double negative charge state (V ) starts to occur at temperatures above  ∼70 K and is monitored via trapping of V by interstitial oxygen impurity atoms ([Formula: see text]), leading to the growth of the prominent vacancy-oxygen ([Formula: see text]) center.