Blending Self-Assembled Monolayers for Enhanced Band Alignment and Improved Morphology in p-i-n Perovskite Photodetectors.

Perovskite photodetectors, devices that convert light to electricity, require good extraction and low noise levels to maximize the signal-to-noise ratio. Self-assembling monolayers (SAMs) have been shown to be effective hole transport materials thanks to their atomic layer thickness, transparency, and energetic alignment with the valence band of the perovskite. While efforts are being made to reduce noise levels via the active layer, little has been done to reduce noise via SAM interfacial engineering.

Dark Current in Broadband Perovskite-Organic Heterojunction Photodetectors Controlled by Interfacial Energy Band Offset.

Lead halide perovskite and organic semiconductors are promising classes of materials for photodetector (PD) applications. State-of-the-art perovskite PDs have performance metrics exceeding silicon PDs in the visible. While organic semiconductors offer bandgap tunability due to their chemical design with detection extended into the near-infrared (NIR), perovskites are limited to the visible band and the first fraction of the NIR spectrum.