Publications by authors named "Edmund M Mills"

Peukert's equation is widely used to model the rate dependence of battery capacity, and has recently attracted attention for application to supercapacitors. Here we present a newly developed method to readily determine Peukert's constant using impedance spectroscopy. Impedance spectroscopy is ideal for this purpose as it has the capability of probing electrical performance of a device over a wide range of time-scales within a single measurement.

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A comprehensive study for the effect of interfacial buffer layers on the electrical transport behavior in CVD-grown graphene based devices has been performed by ac-impedance spectroscopy (IS) analysis. We examine the effects of the trap charges at graphene/SiO interface on the total capacitance by introducing self-assembled monolayers (SAMs). Furthermore, the charge transports in the polycrystalline graphene are characterized through the temperature-dependent IS measurement, which can be explained by the potential barrier model.

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In recent years, interface engineering of solid electrolytes has been explored to increase their ionic conductivity and improve the performance of solid oxide fuel cells and other electrochemical power sources. It has been observed that the ionic conductivity of epitaxially grown thin films of some electrolytes is dramatically enhanced, which is often attributed to effects (e.g.

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The capability for robust operation of nanoscale transistors under harsh environments is equally important as their operating parameters such as high on-currents, high mobility, and high sensing selectivity. For electronic/biomedical applications, in particular, transistor operation must be stable under diverse conditions including ambient humidity, water, blood, and oxygen. Here we demonstrate the use of a self-assembled monolayer of octadecylphosphonic acid (OD-PA) to passivate a functionalized nanowire transistor, allowing the device to operate consistently in such environments.

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Graphene barristors are a novel type of electronic switching device with excellent performance, which surpass the low on-off ratios that limit the operation of conventional graphene transistors. In barristors, a gate bias is used to vary graphene's Fermi level, which in turn controls the height and resistance of a Schottky barrier at a graphene/semiconductor heterojunction. Here we demonstrate that the switching characteristic of a thin-film ZnO/graphene device with simple geometry results from tunneling current across the Schottky barriers formed at the ZnO/graphene heterojunctions.

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