Nanomaterials (Basel)
February 2022
The majority of proposed exotic applications employing 3D topological insulators require high-quality materials with reduced dimensions. Catalyst-free, PVD-grown BiSe nanoribbons are particularly promising for these applications due to the extraordinarily high mobility of their surface Dirac states, and low bulk carrier densities. However, these materials are prone to the formation of surface accumulation layers; therefore, the implementation of surface encapsulation layers and the choice of appropriate dielectrics for building gate-tunable devices are important.
View Article and Find Full Text PDFThe yield and morphology (length, width, thickness) of stoichiometric BiSe nanoribbons grown by physical vapor deposition is studied as a function of the diameters and areal number density of the Au catalyst nanoparticles of mean diameters 8-150 nm formed by dewetting Au layers of thicknesses 1.5-16 nm. The highest yield of the BiSe nanoribbons is reached when synthesized on dewetted 3 nm thick Au layer (mean diameter of Au nanoparticles ~10 nm) and exceeds the nanoribbon yield obtained in catalyst-free synthesis by almost 50 times.
View Article and Find Full Text PDFSize distribution, Young's moduli and electrical resistivity are investigated for CuO nanowires synthesized by different thermal oxidation methods. Oxidation in dry and wet air were applied for synthesis both with and without an external electrical field. An increased yield of high aspect ratio nanowires with diameters below 100 nm is achieved by combining applied electric field and growth conditions with additional water vapour at the first stage of synthesis.
View Article and Find Full Text PDFKnowledge of nucleation and further growth of BiSe nanoplates on different substrates is crucial for obtaining ultrathin nanostructures and films of this material by physical vapour deposition technique. In this work, BiSe nanoplates were deposited under the same experimental conditions on different types of graphene substrates (as-transferred and post-annealed chemical vapour deposition grown monolayer graphene, monolayer graphene grown on silicon carbide substrate). Dimensions of the nanoplates deposited on graphene substrates were compared with the dimensions of the nanoplates deposited on mechanically exfoliated mica and highly ordered pyrolytic graphite flakes used as reference substrates.
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