Elastic modulus of β-GaO nanowires measured by resonance and three-point bending techniques.

Due to the recent interest in ultrawide bandgap β-GaO thin films and nanostructures for various electronics and UV device applications, it is important to understand the mechanical properties of GaO nanowires (NWs). In this work, we investigated the elastic modulus of individual β-GaO NWs using two distinct techniques - in-situ scanning electron microscopy resonance and three-point bending in atomic force microscopy. The structural and morphological properties of the synthesised NWs were investigated using X-ray diffraction, transmission and scanning electron microscopies.

Heat-induced morphological changes in silver nanowires deposited on a patterned silicon substrate.

Metallic nanowires (NWs) are sensitive to heat treatment and can split into shorter fragments within minutes at temperatures far below the melting point. This process can hinder the functioning of NW-based devices that are subject to relatively mild temperatures. Commonly, heat-induced fragmentation of NWs is attributed to the interplay between heat-enhanced diffusion and Rayleigh instability.

Reshaping Covalent Nanowires by Exploiting an Unexpected Plasticity Mediated by Deformation Twinning.

Nanowires (NWs) are among the most studied nanostructures as they have numerous promising applications thanks to their various unique properties. Furthermore, the properties of NWs can be tailored during synthesis by introducing structural defects such as nano-twins, periodic polytypes, and kinks, i.e.

Ir impurities in [Formula: see text]- and [Formula: see text]-[Formula: see text] and their detrimental effect on p-type conductivity.

Recently gallium oxide ([Formula: see text]) has become one of the most actively studied materials due to its competitive electronic properties such as wide bandgap, high breakdown field, simple control of carrier concentration, and high thermal stability. These properties make gallium oxide a promising candidate for potential applications in high-power electronic devices. [Formula: see text]-[Formula: see text] crystals are commonly grown by the Czochralski method in an iridium (Ir) crucible.

The Effect of a Nucleation Layer on Morphology and Grain Size in MOCVD-Grown β-GaO Thin Films on C-Plane Sapphire.

β-GaO thin films grown on widely available c-plane sapphire substrates typically exhibit structural defects due to significant lattice and thermal expansion mismatch, which hinder the use of such films in electronic devices. In this work, we studied the impact of a nucleation layer on MOCVD-grown β-GaO thin film structure and morphology on a c-plane sapphire substrate. The structure and morphology of the films were investigated by X-ray diffraction, atomic force microscopy, transmission and scanning electron microscopy, while the composition was confirmed by X-ray photoelectron spectroscopy and micro-Raman spectroscopy.

Effect of DNA Aptamer Concentration on the Conductivity of a Water-Gated Al:ZnO Thin-Film Transistor-Based Biosensor.

Field-effect transistor-based biosensors (bio-FETs) are promising candidates for the rapid high-sensitivity and high-selectivity sensing of various analytes in healthcare, clinical diagnostics, and the food industry. However, bio-FETs still have several unresolved problems that hinder their technological transfer, such as electrical stability. Therefore, it is important to develop reliable, efficient devices and establish facile electrochemical characterization methods.

Unraveling the Structure and Properties of Layered and Mixed ReO-WO Thin Films Deposited by Reactive DC Magnetron Sputtering.

Tungsten trioxide (WO) is a well-known electrochromic material with a wide band gap, while rhenium trioxide (ReO) is a "covalent metal" with an electrical conductivity comparable to that of pure metals. Since both WO and ReO oxides have perovskite-type structures, the formation of their solid solutions (ReO-WO or Re W O) can be expected, which may be of significant academic and industrial interest. In this study, layered WO/ReO, ReO/WO, and mixed ReO-WO thin films were produced by reactive DC magnetron sputtering and subsequent annealing in air at 450 °C.

Fast-Response Single-Nanowire Photodetector Based on ZnO/WS Core/Shell Heterostructures.

The surface plays an exceptionally important role in nanoscale materials, exerting a strong influence on their properties. Consequently, even a very thin coating can greatly improve the optoelectronic properties of nanostructures by modifying the light absorption and spatial distribution of charge carriers. To use these advantages, 1D/1D heterostructures of ZnO/WS core/shell nanowires with a-few-layers-thick WS shell were fabricated.