Porous materials as effective chemiresistive gas sensors.

Chemiresistive gas sensors (CGSs) have revolutionized the field of gas sensing by providing a low-power, low-cost, and highly sensitive means of detecting harmful gases. This technology works by measuring changes in the conductivity of materials when they interact with a testing gas. While semiconducting metal oxides and two-dimensional (2D) materials have been used for CGSs, they suffer from poor selectivity to specific analytes in the presence of interfering gases and require high operating temperatures, resulting in high signal-to-noise ratios.

Effects of thermal annealing on analog resistive switching behavior in bilayer HfO/ZnO synaptic devices: the role of ZnO grain boundaries.

The effects of thermal annealing on analog resistive switching behavior in bilayer HfO/ZnO synaptic devices were investigated. The annealed active ZnO layer between the top Pd electrode and the HfO layer exhibited electroforming-free resistive switching. In particular, the switching uniformity, stability, and reliability of the synaptic devices were dramatically improved thermal annealing at 600 °C atomic force microscopy and X-ray diffraction analyses revealed that active ZnO films demonstrated increased grain size upon annealing from 400 °C to 700 °C, whereas the ZnO film thickness and the annealing of the HfO layer in bilayer HfO/ZnO synaptic devices did not profoundly affect the analog switching behavior.

ZnWO nanorod-colloidal SnO quantum dots core@shell heterostructures: Efficient solar-light-driven photocatalytic degradation of tetracycline.

Zinc tungsten oxide (ZW) and colloidal SnO quantum dots (CS) were synthesized individually by hydrothermal and wet chemical methods. ZW-CS core@shell nanorods were prepared using a sonochemical method for the enhanced photocatalytic activity of tetracycline (TC) degradation. ZW-CS core@shell nanorods were systematically characterized by structural, morphological mapping and optical techniques.

Effect of high-pressure D and H annealing on LFN properties in FD-SOI pTFET.

Tunneling field-effect transistors (TFETs) are a promising candidate for the next generation of low-power devices, but their performance is very sensitive to traps near the tunneling junction. This study investigated the effects of high-pressure deuterium (D) annealing and hydrogen (H) annealing on the electrical performance and low-frequency noise (LFN) of a fully depleted silicon-on-insulator p-type TFET. Without high-pressure annealing, the typical noise power spectral density exhibited two Lorentzian spectra that were affected by fast and slow trap sites.

IGZO-decorated ZnO thin films and their application for gas sensing.

In this study, indium-gallium-zinc oxide (IGZO)-decorated ZnO thin films were investigated through the change in IGZO deposition time for the detection of NO gas. The atomic layer deposited ZnO on interdigitated Au electrode alumina substrates are decorated with IGZO by controlling the deposition time. The IGZO (ZnO:GaO:InO = 1:1:1 mol.

Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics.

The electrical properties, resistive switching behavior, and long-term potentiation/depression (LTP/LTD) in a single indium-gallium-zinc-oxide (IGZO) and bi-layer IGZO/ZnO (ZnO: zinc oxide) memristors were investigated for synapse application. The use of the oxide bi-layer memristors, in particular, improved electrical properties such as stability, memristor reliability, and an increase in synaptic weight states. The set voltage of bi-layer IGZO/ZnO memristors was 0.

Fluorine-implanted indium-gallium-zinc oxide (IGZO) chemiresistor sensor for high-response NO detection.

Gas sensors fabricated using In-Ga-Zn oxide (IGZO) thin films doped with Fluorine (F) were used to detect nitrogen dioxide (NO) gas. IGZO films with a thickness of 250 nm were deposited onto SiO/Si substrates via radio-frequency magnetron sputtering, followed by F-doping by an ion-implantation procedure with implant energy of 45 keV and a dose of 3 × 10 ions/cm. The NO gas detection performance of the fabricated thin-film sensors was tested at various temperatures and NO concentrations.

Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs.

Ultra-low contact resistance at the interface between NiGe and p-Ge, i.e., NiGe/p-Ge was achieved by introducing terbium (Tb) as an interlayer in forming NiGe using Tb/Ni/TiN structure.

Temperature Dependence of Low Frequency Noise in Silicon on Insulator Tunneling Field Effect Transistor.

In this work, noise mechanism of a tunneling field-effect transistor (TFET) on a silicon-on-insulator substrate was studied as a function of temperature. The results show that the drain current and subthreshold slope increase with increase in temperature. This temperature dependence is likely caused by the generation of greater current flow owing to decreased silicon band gap and leakage.

Morphology-Dependent Photoelectrochemical and Photocatalytic Performance of -Bi₂O₃ Nanostructures.

Simple one-step solvothermal route was used to synthesize -Bi₂O₃ nanostructures. Well-defined nanoflowers and finite nanorods surface morphology of the samples were revealed. The physical characterization and material confirmation was explored by employing X-ray diffraction (XRD), Raman, photoluminescence (PL), and Fourier transform infrared (FTIR) studies.

Hydrothermal synthesis of ZnO nanorods in the presence of a surfactant.

Controlling the dimensions, positioning, and shapes of semiconductor nanowires, nanorods, and nanobelts lies in the synthesis and understanding of their growth mechanism. Controlled growth and synthesis is required in the fabrication of nanodevices and nanosensors. Among methods utilized for one-dimensional nanostructure synthesis, the hydrothermal process--a simple and cost-effective technique involving a low process temperature--has emerged as a powerful tool for the fabrication of anisotropic nanomaterials.