Publications by authors named "E S Bielejec"
Ion implantation is a key capability for the semiconductor industry. As devices shrink, novel materials enter the manufacturing line, and quantum technologies transition to being more mainstream. Traditional implantation methods fall short in terms of energy, ion species, and positional precision.
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- Solid-state quantum emitters are becoming important for quantum networking, but traditional optical methods for measuring them are inefficient and hard to repeat on a large scale.
- New spectroscopic techniques have been developed that allow for large-scale, automated characterization of color centers, including a method that tracks them using a global coordinate system for easy comparison across experiments.
- An advanced cryogenic microscope was used to significantly speed up the resonant spectroscopy process, and automated methods now allow for the imaging of thousands of fields, which will improve the identification of useful quantum emitters for various applications.
Local crystallographic features negatively affect quantum spin defects by changing the local electrostatic environment, often resulting in degraded or varied qubit optical and coherence properties. Few tools exist that enable the deterministic synthesis and study of such intricate systems on the nano-scale, making defect-to-defect strain environment quantification difficult. In this paper, we highlight state-of-the-art capabilities from the U.
View Article and Find Full Text PDFUnderstanding carrier trapping in solids has proven key to semiconductor technologies, but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here, we investigate the capture of photogenerated holes by an individual negatively charged nitrogen-vacancy (NV) center in diamond at room temperature. Using an externally gated potential to minimize space-charge effects, we find the capture probability under electric fields of variable sign and amplitude shows an asymmetric-bell-shaped response with maximum at zero voltage.
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- Focused ion beam implantation can precisely place defect centers in wide bandgap semiconductors but has low activation efficiency for creating single photon emitters.
- A new scalable technique using multiple low-ion-implantation steps and in situ photoluminescence evaluation achieved a 70% yield of single defects in silicon carbide, significantly improving on typical methods.
- This method shows promise for enhancing quantum information technologies and can be combined with techniques like annealing and cryogenic operations to work with other materials.